F00125 SSDI

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SOLID STATE DEVICES, INC jf jone: x ax: *

5 AMP

Designer’s Data Sheet 200 VOLTS 0.8 Q FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate = = Low ROS(on) and high transconductance 28 PIN CLCC . Excellent high temperature stability . = Very fast switching speed a Fast recovery and superior dv/dt performance oe = Increased reverse energy capability re Ss s Low input and transfer capacitance for easy paralleling th, ae = ~—_ Ceramic Seals for improved hermeticity ai nv . Hermetically sealed surface mount package t = ‘TX, TXV and Space Level screening available = Replaces: IRF220 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Votage [vos [eo |v Continuous Drain Current @ TC=25°C 5.0 Continuous Drain Current @ TA=25°C 0.8 Operating and Storage Temperature -55 to +150 Thermal Resistance, Junction to Case Resc Thermal Resistance, Junction to Ambient Resa Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C Watts Total Device Dissipation @ TA=25°C PACKAGE OUTLINE: 28 PIN CLCC . 0.030 TvP. COUNCE: 1, 15 & 28 so x 49 comm 9 PLCS + eon +/-201 > frost. DRAIN: 5 & 11 GATE: 2, 3, 13, 14 70030 NOTE: All Drain/Source pins °° */-%° 5 0.300 FT 300 must be connected ‘on the PC Board in order to maximize current capability and minimize RDS(on) pn 26 | | soss wax ooas PIN PINT 010 TYP. 020 x 43 CHAM 1 PLC NOTE: All ificatl bject to ch ith ‘SSDI prior to release.

SOLID STATE DEVICES, INC

14849 Firestone Boulevard: La Mirada,CA 90638

Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) RATING symeoL | Mn | tye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID 0.7 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250yA) Forward Transconductance (VDS >ID(on) X_RDS(on) Max, IDS=50% rated ID) Zero Gate Voltage Drain Current (VBSemae rated voltage, VGS=0 py) 250 pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward} At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg Gate to Source Sarge 80% rated VDS Qgs Gate to Drain Charge lated Qgq Turn on Delay Time VOD 50% ta(on) 20 40 Rise Time 50% rated ID tr 30 60 Turn Off Delay Time RG=500 td(ott 50 100 Fall Time tt 30 60 Diode Forward voltage Vsp (\\S=rated ID, VGS=0 V, TJ=25°C) TJ=25°C Diode Reverse Recovery Time a nsec Reverse Recovery Charge | araeie..| de | = | 8] =| ne Input Capacitance VGS-=0 Volts Ciss 450 600 Output Capacitance VDS=25 Volts Coss 150 300 Reverse Transfer Capacitance f= 1 MHz Crss. 40 80 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.