F00121_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
my: SFF430M SOLID STATE DEVICES, INC KS SFF430Z ialslidldehceeen hea eneinlaniaae 4.5 AMP Designer's Data Sheet 500 VOLTS 150 FEATURES: N-CHANNEL . POWER MOSFET . Rugged construction with polysilicon gate . Low ROS(on) and high transconductance TO-254 TO-254Z . Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt performance : Increased reverse energy capability . Low input and transfer Sapacitance for easy paralleling SD Ke . eramic Seals for improved hermeticity SZ <> + Hermetically sealed package g ZR SZ . TX, TXV and Space Level screening available ¢ . Replaces: IRF430 Types MAXIMUM RATINGS CHARACTERISTIC symBo. | VALUE | _UNIT Continuous Drain Current pm | 4 | Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 63 Total Device Dissipation @ TC=55'C 48 Watts PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z PIN OUT: PIN OUT: PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 260 260 3k 190 2a 050 B10: ] [“ Ws rt 540-4 =a .050 685 800 T 270 in 665 m0 eH 270 C 540 L | Lo “138 [ 4 a 4 Pes, 1 555 .270 2555 500 1 3 ai 3x of 4b y “tase 150 850 OF ose 3x 9.0404b4 | 2x15088¢ Ab ssopse Available with Glass or Ceramic Seals. Contact Factory for details. NOTE: All ificati b h ithout SSDI prior to release.
SFF430Z SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) RATING symeou | min | typ | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVoss Drain to Source on State Resistance (VGS=10 V, ID= 2.5 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250,1A) Forward Transconductance (VDS 2 10 V, IDS= 2.5 A) 27 41 Zero Gate Voltage Drain Current VDS=max rated voltage, VGS=0 by) Ipss 250 pA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward} At rated VGS 100 Gate to Source Leakage Reverse Iss -100 Total Gate Charge VGS=10 Volts Qg 21 32 Gate to Source Charge 80% rated VDS Qgs 3.2 48 Gate to Drain Charge Rated ID Qoa "1 17 Turn on Delay Time ves td(on) 1 7 Rise Time 1D=4.5A tr 15 23 Turn Off Delay Time RG= 120 ta(ott) 35 53 Fall Time RD= 56 2 tt 15 23 Diode Forward Voltage Vsp (\\S=rated ID, VGS=0 V, Tu=25°C) i i TJ=25'C 180 370 760 Diode Reverse Recovery Time 7” tr nsec Reverse Recovery Charge duds Wheec Qrr 0.96 2.0 43 Me} Input Capacitance VGS-=0 Volts Ciss 610 Output Capacitance VDS=25 Volts Coss 91 Reverse Transfer Capacitance f= 1 MHz Crss 18 ‘SAFE OPERATING. AREA 'S.0.A.) 10 ee eee eee tee eee eee ies sett! ewes Es Para Sor g ee gE TTT
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‘ot 1 10 100 1000 [RAIN TO SOURCE VOLTAGE (VDS) aaan