F00117_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
SOLID STATE DEVICES, INC jone: x + Fax: - ese 4.5 AMP Designer’s Data Sheet 500 VOLTS 1.6Q FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with polysilicon gate . Low RDS(on) and high transconductance TO-5 . Excellent high temperature stability >) . Very fast switching speed (F . Fast recovery and superior dv/dt performance we . Increased reverse energy capability /TT . Low input and transfer capacitance for easy paralleling /// . Ceramic Seals for improved hermeticity //f . Hermetically sealed package /t] . TX, TXV and Space Level screening available / . Replaces: IRF430 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | UNIT | Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C. Total Device Dissipation @ TC=55°C. PACKAGE OUTLINE: TO-5 . g.100° PIN OUT: eer ist nin Ye 4 PIN 1: SOURCE 4 oe Lp PIN 2: GATE t —=—— oie 2 ii : . . ye. Ne 45° typ. \\ 00.021" x R0.007" max. soni, 2008 Vl S 3a ons ' 0.045 0.050" nox. oes NOTE: All ificati fh i SSDI prior to release.
SFF430/5 SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Uniess Otherwise Specified) RATING syeoL | min | tye | max | unit | Drain to Source Breakdown Voltage (VGS=0 V, |D=250A) BVpss Drain to Source on State Resistance (VGS=10 V, ID= 2.5 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V 45 Gate Threshold Voltage (VDS=VGS, ID=250pA) Vasith) 20 Vv Forward Transconductance (VDS > 10 V, IDS= 2.5 A) 27 Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 21 32 Gate to Source Charge 80% rated Os Qgs 3.2 48 Gate to Drain Charge ater Qga "1 17 Turn on Delay Time voD=s0%% ta(on) 1 17 Rise Time ID=4.5 A tr 15 23 Turn Off Delay Time RG= 12.2 td(otf 35 53 Fall Time RD=56 2 tt 15 23 Diode Forward Voltage Vsp v (\\S=rated ID, VGS=0 V, TJ=25°C) ‘ + TJ=25°C Diode Reverse Recovery Time s 180 370 760 nsec Reverse Recovery Charge an at aijec lg | 0.96 2.0 43 pe Input Capacitance VGS=0 Volts Ciss 610 Output Capacitance VDS=25 Volts Coss 91 Reverse Transfer Capacitance f= 1 MHz Crss 18 SAFE OPERATING AREA (5.0.4) Ye = 25 ¢, 0.¢, COO a a oS fe a & os I TTT NTT cS ae See ee ee TTT i | oor LEI TTI TTT ot 1 10 100 v000 DRAIN TO SOURCE VOLTAGE (VDS)