F00113_15 SSDI

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content

SOLID STATE DEVICES, INC A SFF240Z ™ Waa Phones (ia) 70°SS01 (7734) Pax. (748) S278 jone: (714) 671 (7734) - Fax: (714) 522-7424 18 AMP : . 200 VOLTS Designer's Data Sheet g 0.180 N-CHANNEL FEATURES: POWER MOSFET . Rugged construction with polysilicon gate . Low RDS(on) and high transconductance . Excellent high temperature stability TO-254 TO-254Z . Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability . Low input and transfer capacitance for easy paralleling Ss . geramie Seals for improved hermeticity DEK . lermetically seal package F. > <> - TX, TXV and Space Level screening available LPC . Replaces: IRFM240 Types MAXIMUM RATINGS CHARACTERISTIC sympo. | VALUE | _UNIT Drain Source Votage [vos [00 | vote Fcasiesoucevoige —SSSSCSC~dSC ||| Fcoimsoanomen Operating and Storage Temperature Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C 56 PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z PIN OUT: PIN OUT: PIN 1: DRAIN . PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 260 260 Ee 38 A gts le os0 B10. ] [“ 138 hr 50-4 ak .050 TT

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LU | Lo 13 [ Ics 1 855 J amok 555 500 1 3 a 35 0045 ab regis tH bso osc ry ase jx eo40dk-d | axtsoase 4b tsoese Available with Glass or Ceramic Seals. Contact Factory for details.

2 All i hi

‘SSDI prior to release.

SFF240Z SOLID STATE DEVICES, INC

14849 Firestone Boulevard: La Mirada,CA 90638

Phone: (714) 670-SSDI (7734): Fax: (714) 22-7424 ELECTRICAL CHARACTERISTICS @ Tyz=25 C (Unless Otherwise Specified) RATING symBoL| MIN | typ | max | unrr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,/A) BVoss v Drain to Source on State Resistance (VGS=10 V, ID= 10 A) Rpsjon) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, De250uAy Vas(th) v Forward Transconductance (VDS 2 10 V, IDS= 10 A) Zero Gate Voltage Drain Current \\VDS=max rated voltage, VGS=0 by) 250 pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 40 Gate to Source Sharge 80% rated VOS Qgs 7 Gate to Drain Charge at Qga 21 Turn on Delay Time vobs vps ta(on) 14 21 Rise Time rated ID tr 52 HA Turn Off Delay Time RG= 9.10 ta(off 45 68 Fall Time RD= 5.62 tt 36 54 Diode Forward Voltage (IS=rated ID, VGS=0 V, TJ=25°C) a : TJ=25°C Diode Reverse Recovery Time ~ nsec Reverse Recovery Charge eae. | de | 2 | B | 8 | ne Input Capacitance VGS-0 Volts Ciss 1300 Output Capacitance VDS=25 Volts Coss 380 Reverse Transfer Capacitance f=1MHz Crss 93 SAFE OPERATING AREA (5.0.A.)

900 SS ee

38 CA ES

DRAIN TO SOURCE VOLTAGE (VDS)