F00107_15 SSDI
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SSDI| PRELIMINARY SFF240-28 SOLID STATE DEVICES, INC honor (714) 670-SS01 (7734): Fax: (rts) 822.7424 G one: x ‘ax: ¥
15 AMP
Designer’s Data Sheet 200 VOLTS 9 0.200 FEATURES: N-CHANNEL POWER MOSFET = — Rugged construction with polysilicon gate = Low DS(on) and high transconductance 28 PIN CLCC s Excellent high temperature stability . Very fast switching speed . Fast recovery and superior dv/dt Performance @ Increased reverse energy capability . Low input and transfer capacitance for easy paralleling @ — Ceramic Seals for improved hermeticity = ~—Hermetically sealed surface mount package . TX, TXV and Space Level screening available . Replaces: IRF240 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL vaLuE | UN Drainto Sour Votage | vos | 00 vos [corns Oencuen CY Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 36 Total Device Dissipation @ TC=80°C. 20 PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE: 1, 15-28 DRAIN: 5-11 2 3 Om a ACE asm rr ee 17, GATE: 2, 3, 13, 14 NOTE: All Darin/Source pins ase .,-s00 ome oor ae must be connected = on the PC Board in order to maximize current capability and minimize RDS(on) PIN ret ame +7-a01 rim = fe aPC LL ors max an re. NOTE: All iticati i hi i SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734)- Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) RATING | svmeou | min | tye | max | unrr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250nA) BVpss Drain to Source on State Resistance (VGS=10 V, ID= 9 A) Rpsion) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V ID(on) Gate Threshold Voltage (VDS=VGS, ID=250p/A) Vasith) v Forward Transconductance (VDS > 10 V, IDS= 9 A) S(u) Zero Gate Voltage Drain Current (VDS-B0% rated voltage, VGS=0 Y 250 pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 40 Gate to Source Sharge 80% | rated N DS Qgs 7 Gate to Drain Charge ate Qga 21 Turn on Delay Time VOD-50% ta(on) 14 21 Rise Time 50% rated ID tr 52 77 Turn Off Delay Time RG= 9.12 ta(ott) 45 68 Fall Time RD=5.6 tt 36 54 Diode Forward Voltage Vsp (IS=rated 1D, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Pera 120 nsec Reverse Recovery Charge di/dt-100 Alusec 13 uc Input Capacitance VGS=0 Volts Ciss 1300 Output Capacitance VDS=25 Volts Coss 380 Reverse Transfer Capacitance fe 1 MHz Crss 93 SAFE OPERATING AREA (S.0.A.) 10 ae A BT TT 2 LN Co So on LUTE TI TTT TTT 0.1 1 10 100 1000 DRAIN TO SOURCE VOLTAGE (VOS)