F00103_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
: SFF450/61 SOLID STATE DEVICES, INC NL ; : 13 AMP Designer's Data Sheet 500 voTS FEATURES: N-CHANNEL POWER MOSFET LJ Rugged construction with poly silicon gate = Low DS(on) and high transconductance TO-61 ® Excellent high temperature stability @ Very fast switching speed = Fast recovery and superior dv/dt Performance ™ Increased reverse energy capability = Low input and transfer capacitance for easy paralleling = Hermetically sealed power package m TX, TXV and Space Level screening available ™ Replaces: IRF450 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL vaLuE | UN Drain Source Votage [vos [sco | one Feomumsoencwen PT Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: TO-61 PIN OUT: a caso 0213" 150 10.170" PIN 1: SOURCE . PIN 2: GATE . [ ) PIN 3: DRAIN Ee | [0] = Ne . pays 0170" 3 | vn Te e072, sre BR Ste 1 age’ ese J bee” | 0.875" 0.640" OTE: Al Iticati Sb i ‘SSDI prior to release.
PRELIMINARY SSDI| SFF450/61 SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734)- Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ 1J=25 C (Unless Otherwise Specified) [RATING = sep | own | orp | ax __| unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=7.2 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, D=250uA) Vasi(th) 4.0 Forward Transconductance (VDS 2 50 V, IDS=7.2 A) 8.7 Zero Gate Voltage Drain Current 250 = max rated voltage, VGS= \\VDscatee rated VDS, VGS=0 V, T=125°0) 1000 HA Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 83 120 Gate to Source Sharge 80% rated VDS Qgs 11 17 Gate to Drain Charge Rated ID Qga 42 64 Turn on Delay Time voDs rad talon) 18 27 Rise Time 50% rated ID tr 44 66 Turn Off Delay Time RG- 6.2.0 tarot 79 100 Fall Time RD=20W tt 40 60 Diode Forward Voltage (IS=rated ID, VGS=0 V, TJ=25°C) i, TJ=25°C Diode Reverse Recovery Time a ter 580 1200 nsec Reverse Recovery Charge dudteiae Wiaec Qrr | | 67 14 uc Input Capacitance VGS=0 Volts Ciss 2700 Output Capacitance VDS=25 Volts Coss 350 Reverse Transfer Capacitance f= 1 MHz Crss 75 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.