F00097_15 SSDI
Document overview
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Technical content
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level └ Lead Option 3/ __ = Straight Leads D B = D o w n B e n d U B = U p B e n d └ Package 3/ M = TO-254 Z = TO-254Z SFF450M SFF450Z
13 AMP / 500 Volts
0.4 Ω N-Channel POWER MOSFET Features:
- Rugged Construction with Polysilicon Gate Cell
- Low R DS(ON) and High Transconductance
- Excellent High Temperature Stability
- Very Fast Switching Speed
- Fast Recovery and Superior dV/dt Performance
- Increased Reverse Energy Capability
- Low Input and Transfer Capacitance for Easy Paralleling
- Ceramic Seals Available for Improved Hermeticity
- Hermetically Sealed Surface Mount Power Package
- TX, TXV, Space Level Screening Available
- Replacement for IRFM450 Types Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 500 Volts Gate – Source Voltage VGS ±20 Volts Continuous Collector Current ID 13 Amps Operating & Storage Temperature Top & Tstg -55 to +150 ºC Maximum Thermal Resistance Junction to Case RθJC 1 ºC/W Total Device Dissipation TC = 25ºC TC = 55ºC PD 125 95 W TO-254 (M) TO-254Z (Z) For Pin Out Configuration and Optional Lead Bend, Se Page 3. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00097E DOC
Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF450M SFF450Z Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 μA) BVDSS 500 –– –– Volts Drain to Source On State Resistance (VGS=10 V, ID= 7.2 A) RDS(on) –– 0.35 0.40 Ω On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10 V) ID(on) 13 –– –– A Gate Threshold Voltage (VDS=VGS, ID= 250 μA) VGS(th) 2.0 –– 4.0 V Forward Transconductance (VDS≥ 50 V, IDS= 7.2 A) gfs 8.7 131 –– mho Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) I DSS –– 250 1000 μA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 Volts 80% rated VDS Rated ID Qg Qgs Qgd 120 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS 50% Rated ID RG= 6.2Ω PD= 20 W td(on) tr td(off) tf 100 nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– –– 1.4 V Diode Reverse Recovery Time Reverse Recovery Charge TJ=25ºC IF= Rated ID di/dt=100A/μsec trr QRR 280 3.2 580 6.7 1200 nsec μC Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss 2700 350 pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF450M; SFF450MDB; SFF450MUB; SFF450Z; SFF450ZDB; SFF450ZUB; PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00097E DOC
Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF450M SFF450Z Case Outline: TO-254 (M) .685 .665 .750 .500 PIN 2 PIN 1 PIN 3 Ø.150 .139 .545 .535 .800 .790 .050 .040 .270 .240 .545 .535 .155 .140 3x Ø.045 .035 2x .155 .145 Case Outline: TO-254Z (Z) PIN 1 PIN 2 PIN 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00097E DOC SUFFIX: ZDB SUFFIX: ZUB SUFFIX: MUB SUFFIX: MDB