F00095_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SFF450-.__ SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 12 AMP Designer’s Data Sheet 500 vouts FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK - Excellent high temperature stability - Very fast switching speed + Fast recovery and superior dv/dt performance + Increased reverse energy capability - Low input and transfer capacitance for easy paralleling + Hermetically sealed surface mount power package - TX, TXV and Space Level screening available » Replaces: IRF450 Types MAXIMUM RATINGS. CHARACTERISTIC SYMBOL VALUE UNIT , ; @25°C 12 Operating and Storage Temperature Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C Single Pulse Avalanche Energy Repetitive Avalanche Energy PACKAGE OUTLINE: MILPACK : oni x 45 PIN OUT: oas.cor oat ee, osneais —— PIN 1: DRAIN A 05 Ret H PIN 2: SOURCE im | T sow PIN 3: GATE 2 | onoti | O.330b 005 o4sak.o1t = 4 = —— - || Fis | | —e at 1 0010 ten. ie . L T copra onzS OTE: ificati i SSDI prior to release.
SOLID STATE DEVICES, INC Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING symeou | min | typ | max | untr Drain to Source Breakdown Voltage (VGS=0 V, ID=1mA) BVpss Temperature Coefficient of Breakdown Voltage ABVpss ATI 0.78 we Drain to Source on State Resistance @ 7.75A | RDS(on) 0.40 (VGS=10 V) @12A 0.50 Gate Threshold Voltage (VDS=VGS, ID=250,A) Forward Transconductance (VDS > 10 V, IDS=7.75 A) S(w Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) 25 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 250 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 55 83 120 Gate to Source Charge 50% rated YOS Qgs 5 1 19 Gate to Drain Charge al Qga 27 42 70 Turn on Delay Time VODSS0% td(on) 35 Rise Time 50% rated ID tr 190 Turn Off Delay Time RG= 6.22 td(off) 170 Fall Time tt 130 Diode Forward Voltage 17 (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Pease tre 500 1600 nsec Reverse Recovery Charge di/dt=100 Ajusec Qrr 6.7 14 ye Input Capacitance VGS=0 Volts 2700 Output Capacitance VDS=25 Volts 600 Reverse Transfer Capacitance f= 1 MHz 240 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.