F00093_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC “ jone: x + Fax: x
8 AMP
Designer’s Data Sheet 500 VOLTS g 0.850 FEATURES: N-CHANNEL POWER MOSFET LJ Rugged construction with poly silicon gate = Low DS(on) and high transconductance = Excellent high temperature stability TO-254C = Very fast switching speed ™ Fast recovery and superior dv/dt performance @ Increased reverse energy capability > . Low input and transfer Capacitance for easy paralleling yx Ua = Hermetically sealed package Sy = Low inductance leads 3 tier @ TX, TXV and Space Level screening available ™ Replaces: IRF440 Types MAXIMUM RATINGS CHARACTERISTIC VALUE | UN | Operating and Storage Temperature ‘c ec Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C 56 PACKAGE OUTLINE: CERAMIC TO-254 +590 Ree -j .540+.010 PIN OUT: T TTL 060+ .020 L. —— PIN 1: DRAIN GQ PIN 2: SOURCE 540#.010 .500 H¥) = PIN 3: GATE LIA == oa 4b i2es pet
020 Ref
204.020, — Emr J
0408 DOA | suse o10 IL 600 Ret
‘SSDI prior to release.
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) RATING sympou| mn | rye | max | UNrT | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVoss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID 0.70 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voitage (VDS=VGS, ID=250u,A) Vv Forward Transconductance (VDS 250V, IDS=60% rated ID) 49 7.4 Zero Gate Voltage Drain Current VDS=max rated voltage, VGS=0 Y) 250 pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qs 63 Gate to Source Charge 80% fated VOS Qgs 10 Gate to Drain Charge 10-8 Qga 32 Turn on Delay Time rena ta(on) 14 21 Rise Time ID=8A tr 23 35 Turn Off Delay Time RG=9.10 td(ott) 50 Eos Fall Time RD=300 tt 20 30 Diode Forward Voltage v (IS=rated 1D, VGS=0 V, TJ=25°C) TJ=25°C. Diode Reverse Recovery Time b 210 460 970 nsec Reverse Recovery Charge Pret ee ra 2 4,2 8.9 uc Input Capacitance VGS-0 Volts Ciss 1300 Output Capacitance VDS=25 Volts Coss 180 Reverse Transfer Capacitance f= 1 MHz Crss 45 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.