F00089_15 SSDI

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Technical content

PRELIMINARY X. SPW) : SFF440M SOLID STATE DEVICES, INC ~~ SFF440Z jone: + Fax: -

8 AMP

Designer's Data Sheet 500 vouTs .85Q. FEATURES: N-CHANNEL . POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance TO-254 TO-254Z - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance . Increased reverse energy capabil Ny let <i - Low input and transfer capacitance for easy paralleling SZ - Hermetically sealed package Sx - Low inductance leads 3 ° ZY SZ + TX, TXV and Space, Level screening available - Replaces: IRF440 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | UNIT | Drain to Source Votage [vos [00 | vats | Fcerinowoancwen SCT Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 74 Total Device Dissipation @ TC=55°C 56 PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO 2542 PIN : : PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE ; 260 260 384 gts fe B10 | [* I ro | r 4.050 .800 685 590 270 T | 3 270 [- 540 1 & 270) 555 ot Lg We ~L 3 x ep38 Ab. 150 BSC (2PL) 150 wel 3x ¢.04004-4 Laxisoesc 4b ss0pse Available with Glass or Ceramic Seals. Contact Factory for details. NOTE: All Hticati hi ith: ‘SSDI prior to release.

SFF440Z SOLID STATE DEVICES, INC

14849 Firestone Boulevard: La Mirada,CA 90638

Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) [RATING | spon | wn | tye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,1A) BVoss Vv Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rpsion) 0.70 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V ID(on) Gate Threshold Voltage (VDS=VGS, ID=250,1A) Vasi(th) Forward Transconductance (VDS >50V, IDS=60% rated ID) 74 S(u) Zero Gate Voltage Drain Current VDS=max rated voltage, VGS=0 Y) 250 BA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward Atrated VGS 100 Gate to Source Leakage Reverse Iss -100 Total Gate Charge VGS-10 Volts Qg 42 Gate to Source Sharge 80% rated VDS Qgs § Gate to Drain Charge 'D= Qgd 22 Turn on Delay Time Merent ta(on) 14 24 Rise Time ID=8A tr 23 35 Turn Off Delay Time RG=9.19 ta(ot) 50 7 Fall Time RD=300 tt 20 30 Diode Forward Voltage v (IS=rated ID, VGS=0 V, TJ=25°C) TJ=25°C 460 970 Diode Reverse Recovery Time ~ nsec Reverse Recovery Charge | siti. | de | | | | mee Input Capacitance VGS-0 Volts Ciss 1300 Output Capacitance VDS=25 Volts Coss 180 Reverse Transfer Capacitance f= 1 MHz Crss 45 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.