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NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00087B DOC Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information1/ └ Screening2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package3/ J = TO-257 SFF440J

8 AMP

500 Volts

0.86 Ω Features:  Rugged construction with polysilicon gate  Low RDS(on) and high transconductance  Excellent high temperature stability  Very fast switching speed  Fast recovery and superior dv/dt performance  Increased reverse energy capability  Low input and transfer capacitance for easy paralleling  Hermetically sealed package  Low inductance leads  TX, TXV, S-Level screening available  Replaces: IRF440 types Maximum Ratings Symbol Value Units Drain - Source Voltage VDS 500 V Gate - Source Voltage VGS ±20 V Max. Continuous Drain Current (package limited) @ 25ºC ID 6.9 A Operating & Storage Temperature TOP & TSTG -55 to +150 ºC Maximum Thermal Resistance (Junction to Case) RθJC 2 ºC/W Total Power Dissipation @ TC = 25ºC @ TC = 55ºC PD 63 48 W NOTES: TO-257 *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Maximum current limited by package configuration 4/ Unless otherwise specified, all electrical characteristics @25oC.

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00087B DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF440J Electrical Characteristics4/ Symbol Min Typ Max Units Drain to Source Breakdown Voltage VGS = 0V, ID = 250 µA BVDSS 500 570 –– V Drain to Source On State Resistance VGS = 10V, ID = 60% Rated ID RDS(on) –– 0.65 0.86 Ω On State Drain Current VDS > ID(on) x RDS(on) Max, VGS = 10V ID(on) 8 12 –– A Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(th) 2.0 3.2 4.0 V Forward Transconductance VDS ≥ 50V, ID = 60% Rated ID gfs 4.9 6 –– S( Ʊ) Zero Gate Voltage Drain Current VDS = max rated voltage, VGS = 0V VDS = 80% Rated VDS, VGS = 0V, TA = 125oC IDSS 0.015 250 μA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS 100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V 80% Rated VDS ID = 8A Qg Qgs Qgd nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time VDD = 50% Rated VDS ID= 8 A RG = 9.1Ω RD = 30Ω td(on) tr td(off) tf nsec Diode Forward Voltage IS = Rated ID, VGS = 0V, Tj = 25oC VSD –– 0.85 1.2 V Diode Reverse Recovery Time Reverse Recovery Charge Tj = 25oC, IF = Rated ID, di/dt = 100A/usec trr Qrr 210 900 7.7 970 8.9 nsec μC Input Capacitance Output Capacitance Reverse Transfer Capacitance V GS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss 1450 180 pF

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00087B DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF440J TO-254 (J) PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-257 (J) Pin 1 Pin 2 Pin 3