F00077_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Com. SSpIl PRELIMINARY x?” SFF340M — Hii SOLID STATE DEVICES, INC Lf SFF3402 Fi levard: La Mirade,CA 90638 Phone. triaye 670-801 (7734) eax: (714) 522-7424 10 AMP Designer’s Data Sheet 400 VOLTS FEATURES: N-CHANNEL POWER MOSFET . Rugged construction with poly silicon gate * Low RDS(on) and high transconductance TO-254 TO-254Z + Excellent high temperature stability + Very fast switching speed + Fast recovery and superior dv/dt performance + Increased reverse energy capability + Low input and transfer capacitance for easy paralleling . Hermetically, Sealed package ‘abl SP KK . » TXV an ace Level screening available SZ + Replaces: IRFM340 Types $ ZR <F MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | UN | Fermcieencuren fe Operating and Storage Temperature iG Total Device Dissipation @ TC=25°C 79 Total Device Dissipation @ TC=55°C 55 PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z PIN OUT: PIN OUT: PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 260 : 260 riBa_ 159 ie 38 810 [* t- 540-4 ah .050
800 T —
685 790 .270 T T \\ | ca 270 C 540 555 dol Pes - a i 3x 0888 4k L150 asc (2Pt) | lL 150 BSC 3x 9.0401L4 | 2x1508s¢ 4b soesc Available with Glass or Ceramic Seals. Contact Factory for details. AU i i hi ith SSDI prior to release.
SFF340Z SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
: Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25 C (Unless Otherwise Specified) [RATING | smpon | mn |v | ax | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,1A) BVoss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rpsjon) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250,1A) VGsi(th) Forward Transconductance (VDS > 50V, IDS=60% rated ID) 87 S(u) Zero Gate Voltage Drain Current (ogee rated voltage, VGS=0 y) 250 pA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward} At rated VGS 100 Gate to Source Leakage Reverse Icss -100 Total Gate Charge VGS=10 Volts Qg 43 65 Gate to Source Sharge 80% rated VOS Qgs 6 9.3 Gate to Drain Charge 'D= Qga 22 33 Turn on Delay Time vbDs Se ta(on) 14 9 Rise Time ID=10A tr 27 30 Turn Off Delay Time RG-9.10 ta(ott) 50 m4 Fall Time RD=200 tt 24 36 Diode Forward Voltage Vsb Vv (IS=rated ID, VGS=0 V, TJ=25°C) . . TJ=25°C Diode Reverse Recovery Time i" tr 170 370 790 nsec Reverse Recovery Charge dudts106 Aisec rr 1.6 38 8.2 pc Input Capacitance VGS-=0 Volts Ciss 1300 Output Capacitance VDS=25 Volts Coss 210 Reverse Transfer Capacitance f= 1 MHz Crss 37 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.