F00075_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 410 AMP Designer’s Data Sheet 400 VOLTS FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance TO-257 - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance + Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed package - TX, TXV and Space Level screening available + Replaces: IRF340 Types MAXIMUM RATINGS CHARACTERISTIC [svweo. | vawwe | ur | [anew vote Ss] oY [commasoancres TY [eminence ansinwowe |e || Total Device Dissipation @ TC=25°C 63 Total Device Dissipation @ TC=55°C 48 PACKAGE OUTLINE: TO-257 150 420 200
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PIN OUT: a , PIN 1: DRAIN in 665 Tr PIN 2: SOURCE 937 L645 430 PIN 3: GATE 527 | “A10) F i “4 .750 1 3 ak 4 035 de 2 x100 BSC -120 BSC 3x 8095 NOTE: All specifications are subject to change without notification. SCD’s for these devices should be reviewed by DATA SHEET #: F00075 B SSDI prior to release.
SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ TJ=25°C (Unless Otherwise Specified) RATING sympou| min | typ_| max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) v Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, De2501A) 4.0 Vv Forward Transconductance (VDS > 50V, IDS=60% rated ID) 8.7 S() Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 43 Gate to Source Charge 80% rated VOS Qgs 6 Gate to Drain Charge = Qga 22 Turn on Delay Time VOD ta(on) 14 30 Rise Time ID=10A tr 27 30 Turn Off Delay Time RG=9.10 td(otf) 50 74 Fall Time RD=202 tf 24 36 Diode Forward Voltage Vsp Vv (IS=rated ID, VGS=0 V, TJ=25°C) ir TJ=25'C 170 370 790 Diode Reverse Recovery Time a nsec Reverse Recovery Charge | apes. | de 1.6 3.8 8.2 ue Input Capacitance VGS=0 Volts Ciss 1300 Output Capacitance VDS=25 Volts Coss 210 Reverse Transfer Capacitance f= 1 MHz Crss 37 SAFE PCIE MEAG.) mee ieee emeeel ieeeani| a
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= on LUN c0 Ee es TT et owe Coo oor EI TIME TT ‘O 1 10 100 1000 DORAN TO SOURCE VOLTAGE (VDS)