F00071_15 SSDI
Document overview
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Technical content
SOLID STATE DEVICES, INC jone: ax: -
10 AMP
Designer's Data Sheet 400 VOLTS 0.550 FEATURES: N-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate » Low RDS(on) and high transconductance MILPACK - Excellent high temperature stability - Very fast switching speed : Fast recovery and superior dv/dt performance + Increased reverse energy capability + Low input and transfer capacitance for easy paralleling + Hermetically sealed surface mount power package + TX, TXV and Space Level screening available + Replaces: IRF340 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE Drain Source Voltage [vos | sooo Femnestandnen | Operating and Storage Temperature Total Device Dissipation @ TC=25°C 79 Total Device Dissipation @ TC=55°C 55 PACKAGE OUTLINE: MILPACK . 010 x 45 PIN OUT: 0.351.005" pmeost Conte osz4t.o1s PIN 1: DRAIN oor et (TT 0.050" Ret. PIN 2: SOURCE T ' PIN 3: GATE 2 | c nso 2 | 0.3308.005° oasot.orst Hy ee a: | 0.1308 008" ae. —t 1 waa - one | T cores oor f NOTE: All ificati bj h ithout SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) [RATING =| spon | on | rye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,/A) BVpss Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250A) Vasith) Forward Transconductance (VDS > 50V, IDS=60% rated ID) 87 Sv) Zero Gate Voltage Drain Current VDS=max rated voltage, VGS=0 ) 250 pA VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward} At rated VGS 100 Gate to Source Leakage Reverse Icss -100 Total Gate Charge VGS=10 Volts Qg 43 Gate to Source Sharge 80% rated VOS Qgs 6 Gate to Drain Charge = Qga 22 Turn on Delay Time Meer ta(on) 14 9 Rise Time 1D=10A t 27 30 Turn Off Delay Time RG=9.19 td(otf) 50 74 Fall Time RD=200 tt 24 36 Diode Forward Voltage (IS=rated ID, VGS=0 V, TJ=25°C) it TJ=25°C 170 370 790 Diode Reverse Recovery Time a tr nsec Reverse Recovery Charge aiet ae Wine Qrr 1.6 3.8 82 yc Input Capacitance VGS-0 Volts 1300 Output Capacitance VDS=25 Volts 210 Reverse Transfer Capacitance f= 1 MHz 37 SAF pean ABE (SOA) Tt oe eT oe GT TH Seti eeaaiiiew ati een Nt ef BS g LUM AIM TU TU Fi ERE & THC |_| HUTCH CATT ee -LUIM TUTE TIME UU 04 1 10 100 1000 DRAN TO SOURCE VOLTAGE (VDS)