F00069_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC one: ax: a
40 AMP
Designer’s Data Sheet 100 VOLTS 0.0400 FEATURES: N-CHANNEL = Rugged construction with poly silicon gate POWER MOSFET @ Low RDS(on) and high transconductance = Excellent high temperature stability TO-254C @ Very fast switching speed ™ Fast recovery and superior dv/dt performance ™ Increased reverse energy capability ® Low input and transfer capacitance for easy paralleling & = Hermetically sealed ceramic power package as @ Flat leads for high frequency applications tm @ TX, TXV and Space Level screening available @ Replaces: IRF150 Types MAXIMUM RATINGS = CHARACTERISTIC SYMBOL Operating and Storage Temperature -65 to +150 c Total Device Dissipation @ TC=25°C Derate 1 W/°C above 25°C 125 Watts PACKAGE OUTLINE: CERAMIC TO-254 r.590 rer . 540+ .010 PIN OUT: T TIL .060+ .020 PIN 1: DRAIN | ; 1 14 [ 9.144 4 b.245 Ref .020 Ref 2i0k 020, —. 0404-0045 L | ee L_ 845t.010—I+ .600 Ref SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25,C (Unless Otherwise Specified) [RATING spon | om | tye | max _| unr Drain to Source Breakdown Voltage (VGS=0 V, ID=250yA) BVpss 100 Vv Drain to Source on State Resistance (VGS=10 V, ID=25A) sion) 0.040 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=4.5V, ID=1mA) VGS(th) Forward Transconductance (VDS > 15 V, IDS= 60% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V, TA=25°C) 200 pA (VDS=max rated voltage, VGS=0 V, TA=100°C) 1 mA Gate to Source Leakage Forward] At rated VGS +100 Gate to Source Leakage Reverse: -100 Total Gate Charge VGS=10 Volts 100 120 Gate to Source Charge eo%ratedv0S | GS 75 100 Gate to Drain Charge rated ID Qga 30 50 Turn on Delay Time - td(on) 17 50 Turn Off Delay Time RG= 500 td(off) 40 150 Fall Time tf 20 100 Diode Forward Voltage Vsb (IS= rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time ase, nsec Reverse Recovery Charge didt=100 A/ sec pc input Capacitance VGS=0 Volts Ciss 3000 5000 Output Capacitance VDS=25 Volts Coss 750 2500 Reverse Transfer Capacitance f= 1 MHz Crss 150 1000 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.