F00067_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
SOLID STATE DEVICES, INC jone: (714) (7734): Fax: (714) 35 AMP ' Designer’s Data Sheet 60 VOLTS 0.0220 FEATURES: N-CHANNEL oo 7 POWER MOSFET + Rugged construction with poly silicon gate > Low ROS(on) and high transconductance TO-61 + Excellent high temperature stability + Very fast switching speed + Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling + Hermetically sealed power package + TX, TXV and Space Level screening available - Replaces: IRFO54 Types MAXIMUM RATINGS CHARACTERISTIC symeon_ | value | unt Operating and Storage Temperature ‘Cc Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-61 . PIN OUT: soa PIN 1: SOURCE . 10.213"; PIN 2: GATE O30 ozo" PIN 3: DRAIN 02225" [ ) aaa Fy F—2] ozi3" a _ . - 0.170" 3 Oy | 9.072" asi belo OS 1 ie A Key” 0875" 0.640" NOTE: All ficati bj hi i SSDI prior to release.
SFF054/61 SOLID STATE DEVICES, INC
14849 Firestone Boulevard La Mirada,CA 90638
Phone: (714) 670-SSDI (7734): Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ts=25 C (Unless Otherwise Specified) RATING sympou| min | Tye | max | uNrT | Drain to Source Breakdown Voltage (VGS-0 V, ID=1mA) BVpss v Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rps(on) 0.017 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250,A) Forward Transconductance (VDS >ID(on) X RDS(on) Max, 45 IDS=35A) Zero Gate Voltage Drain Current \\VDSa 80% max rated voltage, VGS=0 V) loss pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 80 180 Gate to Source Charge 80% rated VDS Qgs 20 45 Gate to Drain Charge fated ID Qod 34 105 Turn on Delay Time veDe td(on) 30 33 ‘urn elay Time RG=<6.20 ta(otf Fall Time ¥ c ) 30 100 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) 1 Diode Reverse Recovery Time Wes 6 nsec Reverse Recovery Charge di/dt=100 A/ sec uc Input Capacitance VGS-=0 Volts Ciss Output Capacitance VDS=25 Volts Coss 4600 Reverse Transfer Capacitance f= 1 MHz Crss ae SAFE PERAING BA (GO-A) 100 es epg : ee eae tit r ii beg it Toon mit jot th pf ~---|--} wo OIE 1 1 10 100 ORAN TO SOURCE VOLTAGE (VOS)