F00063_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
D PRELIMINARY £ EGE SOLID STATE DEVICES, INC ‘
14849 Firestone Boulevard: La Mirada,CA 90638 ce a
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 35 AMP Designer’s Data Sheet 60 VOLTS 0.0250 FEATURES: N-CHANNEL Rugged construction with poly silicon gate POWER MOSFET - Low ROS(on) and high transconductance Excellent high temperature stability TO-254C + Very fast switching speed + Fast recovery and superior dv/dt performance + Increased reverse energy capability S) + Low input and transfer capacitance for easy paralleling K - Hermetically sealed power package - Low inductance, ceramic package Ty + Flat leads for high frequency applications - TX, TXV and Space Level screening available + Replaces: IRFO54 Types MAXIMUM RATINGS CHARACTERISTIC Fsvmeon | value | unr Foninwsoucevotaye STs ||| [ommoboncre |e Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: CERAMIC TO-254 .590 Re PIN OUT: 1.5404 .010 PIN 1: DRAIN im B PIN 2: SOURCE PIN 3: GATE 5404 .010 500 H&A) oe ' LY To o144 5 245 Ref
020 Ref
-210+ .020,_ — 040,004 L | — L— 845+.010 1+ .600 Ref NOTE: All ificati bj hi i SSDI prior to release.
SFFOS4C SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25 C (Unless Otherwise Specified) [RATING =| spon | own | ty | max | UNTT | Drain to Source Breakdown Voltage (VGS=0 V, ID=1mA) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID Rpsvon) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250nA) Vasith) v Forward Transconductance (VDS >ID(on) X RDS(on) Max, 20 45 S(v) IDS=35A) Zero Gate Voltage Drain Current Vpsceere ra rated voltage VGS=0 V) pA 'VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qs 80 180 Gate to Source Charge 80% rated vDS Qgs 10 45 Gate to Drain Charge fated ID Qga 34 7 Turn on Delay Time vos Se td(on) 30 33 Rise Time ID=354 tr 20 180 Turn Off Delay Time RG<6.22 td(off) 60 100 Fall Time tt 30 100 Diode Forward Voltage Vsp v (IS=rated ID, VGS=0 V, TJ=25°C) 14 Diode Reverse Recovery Time Tease ter nsec Reverse Recovery Charge di/dt=100 A/ sec Qrr Me} Input Capacitance VGS-=0 Volts Ciss Output Capacitance VDS=25 Volts Coss 4600 Reverse Transfer Capacitance f= 1 MHz Crss “ For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.