F00059 SSDI
Document overview
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Technical content
SOLID STATE DEVICES, INC SFFO54Z _ 14849 Firestone Boulevard. La Mirada,CA 90638 ine Phone: (714) 670-SSDI (7734) + Fax: (714) 522-7424 de
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Designer’s Data Sheet 60 VOLTS 0.0220 FEATURES: N CHANNEL a i” POWER MOSFET + Rugged construction with poly silicon gate - Low RDS(on) and high transconductance TO-254 TO-254Z - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance ~~ TT + Increased reverse energy capability + Low input and transfer capacitance for easy paralleling Gg + Hermetically sealed power package Sg - TX, TXV and Space Level screening available ZEB <> : Replaces: IRFM054 Types SZ POG MAXIMUM RATINGS CHARACTERISTIC SYMBOL value | oun | Fcxinmwoancwes PT Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z PIN OUT: PIN OUT: PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 260 545 349 260 3B gts 48T 950 ato | [* tr 540-4 + ar .050 685 $00 J, | mm J | 665 i 3 270 i 540 LU Lo = 1 [ les. $55 .270! ' = 1 3 ci 3 x 0883 4L} L459 asc (2PL) oss 150 esc 3x e.044L4 L2x1508sc 4 b.1s08sc Available with Glass or Ceramic Seals. Contact Factory for details. NOTE: All ificati bj h i SSDI prior to release.
| ila WZ | SOLID STATE DEVICES, INC
14849 Firestone Boulevard- La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sywpoL| win | typ | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=1mA) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID 0.017 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250A) Vasith) Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, 45 IDS=35A) Zero Gate Voltage Drain Current (VDS=80%max rated voltage, VGS=0 V) pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 “al Gate Charge VGs=10 Volts Qg 80 180 ie to Source Charge 80% rated VOS Qgs 10 45 Gate to Drain Charge late Qga 34 105 Turn on Delay Time vated vos td(on) 30 33 Rise Time 1D=35A tr 20 180 Turn Off Delay Time RG=<6.22 taott) 60 100 Fall Time tt 30 100 Diode Forward Voltage Vsp Vv (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Teese nsec Reverse Recovery Charge di/dt=100 A/usec pc Input Capacitance VGS=0 Volts Ciss Output Capacitance VDS=25 Volts Coss 4600 pF Reverse Transfer Capacitance f= 1 MHz Crss 2000 For thermal derating curves and other characteristic curves please contact SSD! Marketing Department.