F00049E_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00049E DOC Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ └ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level └ Lead Option 3/ __ = Straight Leads DB = Down Bend U B = U p B e n d └ Package 3/ M = TO-254 Z = TO-254Z SFF250M SFF250Z
30 AMP / 200 Volts
0.060 Ω typical N-Channel POWER MOSFET Features:
- Rugged Construction with Polysilicon Gate Cell
- Low R DS(ON) and High Transconductance
- Excellent High Temperature Stability
- Very Fast Switching Speed
- Fast Recovery and Superior dV/dt Performance
- Increased Reverse Energy Capability
- Low Input and Transfer Capacitance for Easy Paralleling
- Ceramic Seals Available for Improved Hermeticity
- Hermetically Sealed Surface Mount Power Package
- TX, TXV, Space Level Screening Available
- Replacement for IRFM250 Types Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 200 Volts Gate – Source Voltage VGS ±20 Volts Continuous Collector Current ID 30 Amps Operating & Storage Temperature Top & Tstg -55 to +150 ºC Maximum Thermal Resistance Junction to Case RθJC 1 ºC/W Total Device Dissipation TC = 25ºC TC = 55ºC PD 125 95 W TO-254 (M) TO-254Z (Z) For Pin Out Configuration and Optional Lead Bend, See Page 3.
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00049E DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF250M SFF250Z Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS= 0 V, ID= 250μA BVDSS 200 –– –– V Drain to Source On State Resistance (VGS= 10 V, ID= 18 A RDS(on) –– 0.06 0.085 Ω Gate Threshold Voltage (VDS= VGS, ID= 250μA VGS(th) 2 3 5 V Forward Transconductance (VDS≥ IN(on) X RDS(on) Max, ID= 18 A gfs 10 17 –– mho Zero Gate Voltage Drain Current (VDS= 200 V, VGS= 0 V) (VDS= 200 V, VGS= 0 V, TA= 125ºC) IDSS –– 250 μA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 V VDS= 100 V ID= 30 A Qg Qgs Qgd 120 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD= 100 V ID= 15 A RG= 6.2Ω td (on) tr td(off) tf 180 100 120 nsec Diode Forward Voltage (IS= 30 A, VGS= 0 V, TJ= 25ºC) VSD –– –– 1.1 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge TJ= 25ºC IF= 10 A di/dt= 100 A/μsec trr QRR 150 2.0 630 nsec μC Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS= 0 Volts VDS= 25 Volts f= 1 MHz Ciss Coss Crss 4200 650 120 pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF250M; SFF250MDB; SFF250MUB; SFF250Z; SFF250ZDB; SFF250ZUB; PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00049E DOC Solid State Devices, Inc. Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF250M SFF250Z Case Outline: TO-254 (M) .685 .665 .750 .500 PIN 2 PIN 1 PIN 3 Ø.150 .139 .545 .535 .800 .790 .050 .040 .270 .240 .545 .535 .155 .140 3x Ø.045 .035 2x .155 .145 Case Outline: TO-254Z (Z) PIN 1 PIN 2 PIN 3 SUFFIX: ZDB SUFFIX: ZUB SUFFIX: MUB SUFFIX: MDB