F00047_15 SSDI

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Technical content

SOLID STATE DEVICES, INC x

14849 Firestone Boulevard- La Mirada,CA 90638

Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424

30 AMP

Designer’s Data Sheet 200 VOLTS 0.085 Q FEATURES: N-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate - Low RDS(on) and high transconductance MILPACK + Excellent high temperature stability + Very fast switching speed - Fast recovery and superior dv/dt performance + Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed power surface mount package + TX, TXV and space Level screening available - Replaces: IRF250 Types MAXIMUM RATINGS: CHARACTERISTIC SYMBOL value | unt | [conosorncies P| || Total Device Dissipation @ TC=25°C. Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: MILPACK iT x PIN OUT: 0.3514.005° meas eee oszat.ors" PIN 1: DRAIN A 0.050" Ret, 7 PIN 2: SOURCE | [=| T oo t PIN 3: oso 22, | Lys | | 0.130.005" i ae at i 4 1__} aes —eeo-= ) 0 enme cor NOTE: All ificati b hi i SSDI prior to release.

SOLID STATE DEVICES, INC

14849 Firestone Boulevard - La Mirada,CA 90638

Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL.CHARACTERISTICS @ TJ=25°C (Unless Otherwise Specified) [RATING =| spon | on | tp | ax | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVoss Drain to Source on State Resistance On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250pA) Vasi(th) 4 Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS=60% rated ID) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) 0.25 (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 80 120 Gate to Source Charge 50% rated VOS Qgs 12 20 Gate to Drain Charge Rated Qga 44 65 Turn on Delay Time VOD 50% ta(on) 20 30 Rise Time 50% rated ID tr 120 180 Turn Off Delay Time RG=6.2 0 ta(ort) 70 1900 Fall Time tt 80 120 Diode Forward Voltage Vsp (IS=rated ID, VGS=9 V, TJ=25°C) Diode Reverse Recovery Time Teese 140 300 630 nsec Reverse Recovery Charge dildt=100 Ajusec 18 3.8 8 pe Input Capacitance VGS=0 Volts 2600 Output Capacitance VDS=25 Volts 650 Reverse Transfer Capacitance f= 1 MHz 150 SAFE OPERATING AREA (S.0.A.) 100 ee aa a ey 2 Se 2 or a 2 TT

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Semeeiii eee eaail ie eesti email eT oa ETI TET TTT O41 1 10 100 1000 DRAIN TO SOURCE VOLTAGE (VDS)