F00045_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC 14849 Firestone Boulevard . La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 30 AMP ’ Designer’s Data Sheet 100 VOLTS 0.055 Q N-CHANNEL FEATURES: POWER MOSFET + Rugged construction with poly silicon gate - Low RDS(on) and high transconductance TO-3 - Excellent high temperature stability Very fast switching speed - Fast recovery and superior dv/dt performance Ni + Increased reverse energy capability > - Low input and transfer capacitance for easy paralleling « Hermetically sealed package u - TX, TXV and Space Level screening available - Replaces: IRF150 Types MAXIMUM RATINGS fe ZO CHARACTERISTIC SYMBOL value | UNIT | Operating and Storage Temperature Total Device Dissipation @ TC=25°C 150 Total Device Dissipation @ TC=55°C 114 PACKAGE OUTLINE: TO-3 PIN OUT: PIN 1: SOURCE 497: PIN 2: GATE 00875" max. : CASE: DRAIN | 9.450 _F 0135" nox ous, (0 - 0.188" max tT — 0.420" Q our re | SALA st SSDI prior to release.
SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING sympou| min | tye | max | unit | Drain to Source Breakdown Voltage (VGS=0 V, ID=250nA) 100 Drain to Source on State Resistance (VGS=10 V, ID=20 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V 30 Gate Threshold Voltage (VDS=VGS, ID=250,1A) Vasith) Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, S(u) IDS=20 A) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS=10 Volts Qg 63 Gate to Source Charge 80% rated YDS Qgs 27 Gate to Drain Charge ated Qga 36 Turn on Delay Time VpD=24V td(on) 35 Rise Time De 20A tr 190 Turn Off Delay Time RG=6.2Q td(off) 125 Fall Time tt 100 Diode Forward Voltage Vsp Vv (IS= 40 A, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time Tas36'6 ter nsec Reverse Recovery Charge di/dt=100 A/usec QrR The} Input Capacitance VGS=0 Volts Ciss 2000 3000 Output Capacitance VDS=25 Volts Coss 1000 1500 Reverse Transfer Capacitance f=1 MHz Crss 350 500 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.