F00043_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 . Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 30 AMP Designer’s Data Sheet 100 VOLTS 0.055 Q FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK - Excellent high temperature stability : Very fast switching speed - Fast recovery and superior dv/dt performance ‘ + Increased reverse energy capability + Low input and transfer capacitance for easy paralleling - Hermetically sealed power surface mount package + TX, TXV and Space Level screening available + Replaces: IRF150 Types MAXIMUM RATINGS CHARACTERISTIC VALUE [cotiuosoancien ST | Operating and Storage Temperature Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: MILPACK 0.010 x 45 PIN OUT: Cc 0.351+.005° parr Conte -— 0.624k.015" —| PIN 1: DRAIN oor Ret, (TY oe Ref, H PIN 2: SOURCE | ose? | PIN 3: GATE asst oor —_t custo [--——- -}-- { |) Els | 0.130.005" —s —t 1 0010 es i =~ one gue Cd oorneoor J AM ificati i fh ith: SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard- La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) §22-7424 ELECTRICAL CHARACTERISTICS @ T,=25’C (Unless Otherwise Specified) RATING symeol | win | tye | max | uni Drain to Source Breakdown Voltage (VGS=0 V, ID=250nA) BVpss 100 v Drain to Source on State Resistance (VGS=10 V, ID=20 A) RDs(on) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250yA) Vasith) 2 Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS=20 A) Zero Gate Voltage Drain Current 'VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS=10 Volts Qg 63 Gate to Source Charge 80% rated yos Qgs 27 Gate to Drain Charge ated | Qga 36 Turn on Delay Time = td(on) 35 Rise Time vo 2 tr 100 Turn Off Delay Time RG= 6.22 taott) 125 Fall Time tt 100 Diode Forward Voltage Vsp Vv (IS= 40 A, VGS=0 V, TJ=25°C) a TJ=25°C 600 Diode Reverse Recovery Time IF=40 A nsec Reverse Recovery Charge di/dt=100 A/usec 3.3 uc Input Capacitance VGS=0 Volts Ciss 2000 3000 Output Capacitance VDS=25 Volts Coss 1000 1500 pF Reverse Transfer Capacitance f= 1 MHz Crss 350 500 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.