F00041_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SOLID STATE DEVICES, INC Phone! (714) S7O-SSDI (7734) Fax: (748) 822-7424 one: + Fax: | Designer’s Data Sheet ~ 100 VOLTS... __. 0.055 Q FEATURES: N-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance TO-254 TO-254Z + Excellent high temperature stability + Very fast switching speed + Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling Gg - Hermeticaly sealed power package 2 KS ‘ . and Space Level screening available 5 $ - Replaces: IRFM150 Types é LPG MAXIMUM RATINGS ; CHARACTERISTIC SYMBOL VALUE UNIT Continuous Drain Current ; » | @ | Amps Operating and Storage Temperature Top & Tstg -55 to +150 Xo} Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C ' PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO-254Z PIN OUT: PIN OUT: PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE Cr $8 4 150 FARE sp 260 = S139 | oe B10 | [“ .800 T_ tS = “050 B 790 345 270 in 535 : jb L | L_ 270 7 540 135 : 555, 1 E Jonk 4 Pies. as 045 a 1 3 505 3x 985 4k] L150 asc PO ase! LL ‘ 3x ¢.0401L4 | 2x1508s¢ 4. btsoase Available with Glass or Ceramic Seals. Contact Factory for details. NOTE: All ificati b h ‘without SSDI prior to release.
SFF150Z SOLID STATE DEVICES, INC
14849 Firestone Boulevard: La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25'C (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250,1A) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=20 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250uA) Vasith) 7 Forward Transconductance (VDS >ID(on) X RDS(on) Max, S(u) IDS=20 A) Zero Gate Voltage Drain Current wos=max fated voltage, VGS=0 V) 250 pA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse 100 XN Total Gate Charge VGS=10 Volts Qg 63 120 Gate to Source Charge 80% rated DS Qgs 15 25 Gate to Drain Charge late Qga 60 75 Turn on Delay Time VoD=24V ta(on) 35 Rise Time ID=20A tr 100 Turn Off Delay Time RG=6.2Q ta(otf) 125 Fall Time tt 100 Diode Forward Voltage Vsp (IS= 40 A, VGS=0 V, TJ=25°C) : " TJ=25°C Diode Reverse Recovery Time IF=40 A nsec Reverse Recovery Charge di/dt=100 A/usec we Input Capacitance VGS=10 Volts Ciss 2000 3600 Output Capacitance VDS=25 Volts Coss 1000 1500 Reverse Transfer Capacitance f=1 MHz Crss 350 500 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.