F00039_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
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Designer’s Data Sheet 100 VOLTS 0.055 Q FEATURES: N-CHANNEL - Rugged construction with poly silicon gate POWER MOSFET + Low RDS(on) and high transconductance - Excellent high temperature stability TO-61 - Very fast switching speed 9 ~ - Fast recovery and superior dv/dt performance UY Y& - Increased reverse energy capability HA TT - Low input and transfer capacitance for easy paralleling ~4 ~ - Hermetically sealed power package S ~ - TX, TXV and Space Level screening available SS A - Screening in accordance with MIL-S-19500/543C is available SS <? - Replaces: IRF150 Types GS MAXIMUM RATINGS: ‘ % CHARACTERISTIC SYMBOL value | UNIT | Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: TO-61 PIN OUT: 0.990" hom, PIN 1: SOURCE 0350" paver PIN 2: GATE 0080 PIN 3: DRAIN . [ ) ste" | J} =] oie vi , ° 0.170" 3 | et : - " 0.687" oaee ose | oser a 0.875" 0.640" NOTE: ificati ith SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard- La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ T,=25°C (Unless Otherwise Specified) RATING symeou| min | tye | max | unr Drain to Source Breakdown Voltage (VGS=0 V, ID=2501A) BVpss v Drain to Source on State Resistance (VGS=10 V, ID=20 A) Roson) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V ID(on) 30 Gate Threshold Voltage (VDS=VGS, ID=250,1A) Vasith) Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS=20 A) 11 Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse 100 Total Gate Charge VGS=10 Volts Qg 63 Gate to Source Charge 80% rated YDS Qgs 27 Gate to Drain Charge ater Qga 36 Turn on Delay Time VDD=24V td(on) 35 Rise Time 1D=20A tr 192 Turn Off Delay Time RG= 6.22 td(otf) 125 Fall Time tt 100 Diode Forward Voltage Vsp v (IS= 40 A, VGS=0 V, TJ=25°C) Diode Reverse Recovery Ti TJ=85°C 600 'y Time IF=40 A nsec Reverse Recovery Charge di/dt=100 A/usec 3.3 uc Input Capacitance VGS=0 Volts Ciss 2000 3000 Output Capacitance VDS=25 Volts Coss 1000 1500 Reverse Transfer Capacitance f= 1 MHz Crss 350 500 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.