F00029_15 SSDI

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00029C DOC Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ + Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level + Lead Option 3/ __ = Cooper Core Alloy Leads BW = Welded Copper Leads + Package: TO-257 SFF140J SFF140JBW

28 AMP / 100 Volts

0.077 W N-Channel POWER MOSFET Features:

  • Rugged Construction with Polysilicon Gate Cell
  • Low RDS(ON) and High Transconductance
  • Excellent High Temperature Stability
  • Very Fast Switching Speed
  • Fast Recovery and Superior dV/dt Performance
  • Increased Reverse Energy Capability
  • Low Input and Transfer Capacitance for Easy Paralleling
  • Ceramic Seals for Improved Hermeticity
  • Hermetically Sealed Surface Mount Power Package
  • TX, TXV, Space Level Screening Available
  • Replacement for IRF140/540 Types
  • Available with enhanced flexibility Cu pins: SFF140JBW Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 100 Volts Gate – Source Voltage VGS ±20 Volts Continuous Collector Current ID 28 Amps Power Dissipation TC = 25ºC TC = 55ºC PD 62.5 47.5 W Operating & Storage Temperature Top & Tstg -55 to +150 ºC Maximum Thermal Resistance Junction to Case RqJC 2 ºC/W TO-257 Pin Out: Pin1: Drain Pin2: Source Pin3: Gate PIN 1 PIN 2 PIN 3 SUFFIX: JD SUFFIX: JU SUFFIX: J

NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00029C DOC Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404 -1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF140J SFF140JBW Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) BVDSS 100 –– –– Volts Drain to Source On State Resistance (VGS=10 V, ID=50% Rated ID) RDS(on)1 –– 0.067 0.077 W On State Drain Current (VDS>ID(on) X RDS(on) Max, VGS=10V, ID= rated ID) RAS(on)2 –– 0.125 A Gate Threshold Voltage (VDS=VGS, ID= 250µA) VGS(th) 2.0 2.4 4.0 V Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 60% Rated ID) gfs 8.7 13 –– S(mho) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=150ºC) IDSS –– 250 mA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 Volts 60% rated VDS 60% Rated ID Qg Qgs Qgd nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS 60% Rated ID RG= 6.2Ω VGS=10 Volts td(on) tr td(off) tf 110 nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– 1.3 2.5 V Diode Reverse Recovery Time Reverse Recovery Charge TJ=25ºC IF=10A Di/dt=100A/µsec trr QRR 0.44 150 0.91 400 1.9 nsec nC Input Capacitance Input Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss 1750 575 125 pF For thermal derating curves and other characteristics please contact SSDI Marketing Department.