F00027_15 SSDI
Document overview
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Technical content
_—. eee SFF130/59 SOLID STATE DEVICES, INC ip one: x - Fax: ¥
14 AMP
Designer’s Data Sheet 100 VOLTS 0.16 Q FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance TO-59 + Excellent high temperature stability + Very fast switching speed OY, - Fast recovery and superior dv/dt performance A CC YS - Increased reverse energy capability (CS - Low input and transfer capacitance for easy paralleling CS - Hermetically sealed stud package g <7 + TX, TXV and Space Level screening available + Replaces: IRF130 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Gate to Source Voltage Continuous Drain Current @TC=25°C @TC=100°C 9 Operating and Storage Temperature Top & Tstg -55 to +150 Total Device Dissipation @ TC=25°C 35 Total Device Dissipation @ TC=55°C 27 PACKAGE OUTLINE: TO-59 PIN OUT: 9.150¢, PIN 1: DRAIN 9090 PIN 2: SOURCE 0.078" 1 901697" _} ow 0.1658" = f \\ =e 0380" 40.497" ois: bathe aN 3 ci ee a ee a) = Ere} Oo NJ id DD | oe WA oss: 0.468" 0.400" 0.320° gio a398° 823 : ificati b hi ith, ‘SSDI prior to release.
SFF130/59 SOLID STATE DEVICES, INC \\ 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ts=25°C (Unless Otherwise Specified) PRATING = sypon| mn | typ | wax | Drain to Source Breakdown Voltage (VGS=0 V, ID=250uA) BVpss Temperature Coefficient of Breakdown Voltage ABVpss al 0.13 we Drain to Source on State Resistance ID=9A 0.13 0.18 (VGS=10 V) ID =14A 0.14 0.21 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V) Gate Threshold Voltage (VDS=VGS, De250uAy 2 ‘orward Transconductance (VDS >ID(on) X RDS(on) Max, 4.6 7 S@©) IDS=60% rated ID) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) . BA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward Total Gate Charge = Q Gate to Source Charge aoe ated Css Qge Gate to Drain Charge Rated ID Qga Turn on Delay Time VDD=50% ta(on) 35 Rise Time . rated VDS tr 80 Turn Off Delay Time ID= 14A td(off) 60 Fall Time RG=7.5Q tt 45 Diode Forward Voltage 1.15 (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time eS, 120 nsec Reverse Recovery Charge di/dt=100 A/ sec 0.7 ue Input Capacitance VGS=0 Volts Ciss 650 Output Capacitance VDS=25 Volts Coss 250 Reverse Transfer Capacitance f= 1 MHz Crss 44 SAFE OPERATING AREA. (S.0.A.) Te= 25 ¢, DC. comm
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