F00025 SSDI
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Technical content
=_— eee SFF130J SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638 - =
Phone: (714) 670-SSDI (7734) »_ Fax: (714) 522-7424 14 AMP Designer’s Data Sheet 100 yours FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance TO-257 - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance : Increased reverse energy capability + Low input and transfer capacitance for easy paralleling - Hermetically sealed package + TX, TXV and Space Level screening available + Replaces: IRFY130 Types MAXIMUM RATINGS CHARACTERISTIC Feneiosoncevite ves f |e Continuous Drain Current @ TC=25°C | ConimuowsPrenCuren’ gee | | Ar Operating and Storage Temperature ‘c Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: TO-257 420 eHONC 0 004 ato PIN OUT: . . 035 PIN 1: DRAIN T | PIN 2: SOURCE 665 Tv PIN 3: GATE 337 645430 . 410 + i “4 .750 1 3 -500 b 4 * 038 de 2 x100 BSC .120 BSC 025 SSDI prior to release.
A SFF130J SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25'C (Unless Otherwise Specified) RATING symsol| MIN | typ | max | UNIT Drain to Source Breakdown Voltage (VGS=0 V, ID=250nA) BVoss Vv Temperature Coefficient of Breakdown Voltage -ABVoss_ ATj we Drain to Source on State Resistance ID =9A On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage Forward Transconductance (VBS >ID(on) X_RDS(on) Max, 46 7 S@) DS=60% rated ID) Zero Gate Voltage Drain Current 'DS=80% rated voltage, VGS=0 V) loss HA VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward | Atrated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 12 35 Gate to Source Sharge 50% rated VDS Qgs 1.5 10 Gate to Drain Charge Rated ID Qo 5 15 VDD=50% 9.5 35 rum ont Delay Time rated VS talon) 42 30 Turn Off Delay Time Rae ta(ott) 22 60 Fall Time mh tr 25 45 Diode Forward Voltage Vv (IS=rated ID, VGS=0 V, TJ=25°C) " TJ=25°C 120 Diode Reverse Recovery Time IF=rated ID nsec Reverse Recovery Charge di/dt=100 Alusec 0.7 pe Input Capacitance VGS=0 Volts Ciss 650 Output Capacitance VDS=25 Volts Coss 250 Reverse Transfer Capacitance f= 1 MHz Crss 44 SAFE OPERATING AREA (S.0.A.) eee Sie aie FEE 8 oe TTT Fe a a 8 2 LL a ot UIP TT ot DORAN TO SOURCE VOLTAGE (VDS) "