F00023_15 SSDI
Document overview
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Technical content
SSD | PRELIMINARY —_ SFF130-28 SOLID STATE DEVICES, INC - 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424
14 AMP
Designer’s Data Sheet: 100 VOLTS 0.16 Q FEATURES: N-CHANNEL POWER MOSFET : Rugged anni with poly silicon gate - Low (on) and high transconductance + Excellent high temperature stability 28 PIN CLCC - Very fast switching speed : Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed surface mount package - TX, TXV and Space Level screening available + Replaces: IRF130 Types MAXIMUM RATINGS: CHARACTERISTIC SYMBOL value | unt | Continuous Drain Current @ TC=25°C Continuous Drain Current @ TA=25°C. @ TC=100°C Operating and Storage Temperature -55 to +150 } | Thermal Resistance, Junction to Case Resc Thermal Resistance, Junction to Ambient Rea Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C Total Device Dissipation @ TA=25°C PACKAGE OUTLINE: 28 PIN CLCC PIN OUT manly : x 43 CHAM. tad SOURCE: 1, 15 & 28 040 x 4! 3 PLES. tt ao10 +/-001 4 frome Typ. DRAIN: 5 & 11 ] = _f 0030 . — NOTE: 0.450 +/-008 SO. =} 0.300 TT 0300 All Drain/Source Pins = must be connected — on the PC Board in = order to maximize L_| current capabili L and minimize RDbs(on) PIN 26 : 4 0.095 MAX. 003s Pmt PINT 0.010 TYP. 920 x 45 CHAM 1 PLC NOTE: Al iticati h SSDI prior to release.
SFF130-28 SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL_CHARACTERISTICS: @ Ty=25°C (Unless Otherwise Specified) RATING svweou| mn | TP | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=250nA) v Temperature Coefficient of Breakdown Voltage ABYSS _- | ow | - | we! Drain to Source on State Resistance ID=9A 0.13 0.18 (VGS=10 V) ID =14A | Ros(on) Ea 0.14 0.21 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V) 14 Gate Threshold Voltage (VDS=VGS, ID=250A) [vem | 2 | ee | « | v | Forward Transconductance (VDS >ID(on) X_RDS(on) Max, 7 IDS=60% rated ID) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) BA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward! at rated VGS 100 Gate to Source Leakage Reverse " -100 Total Gate Charge VGS=10 Volts & 12 35 Gate to Source Charge 50% rated VDS ay 1.5 10 Gate to Drain Charge Rated ID Igd 5 15 5 VDD=50% td(on) 9.5 35 furn on Delay Time rated vos ' tO 42 80 nsec Turn Off Delay Time RG=75Q id(o' 22 60 Fall Time Li 25 45 | Diode Forward Voltage Vv (IS=rated ID, VGS=0 V, TJ=25°C) ‘sD Diode Reverse Recovery Time TJ=25'C ter 120 nsec Reverse Recovery Charge due stat asec Qrr 0.7 ue Input Capacitance VGS=0 Volts Ciss ~ 650 Output Capacitance . VDS=25 Volts Coss — 250 Reverse Transfer Capacitance f=1MHz Crss _— 44 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.