F00021 SSDI
Document overview
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Technical content
SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424
14 AMP
Designer’s Data Sheet 100 VOLTS 0.18 Q FEATURES: N-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate + Low RDS(on) and high transconductance CERPACK + Excellent high temperature stability . + Very fast switching speed + Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling . - Hermetically sealed surface mount package + Low inductance package - TX, TXV and Space Level screening available - Replaces: IRF130 Types MAXIMUM RATINGS: CHARACTERISTIC SYMBOL value | unt | it it @TC=25'C 14 Continuous Drain Current @TC=100°C ; | Ps Amps Operating and Storage Temperature c Total Device Dissipation @ TC=25°C 44 Total Device Dissipation @ TC=55°C 34 Single Pulse Avalanche Energy ee ee ee PACKAGE OUTLINE: CERPACK PIN OUT: PIN 1: SOURCE PIN 2: GATE b= 93709 4 2 CASE: DRAIN | | Z 0.060 0.010" ¥ 0.307" 0.320" 0.015" REF. NOTE: ificati i ith SSDI prior to release.
14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS: @ Ty=25'C (Unless Otherwise Specified) RATING SyMBoL| MN | TYP [MAX | Drain to Source Breakdown Voltage (VGS=0 V, ID=250,A) BVpss TemperatureCoefficient of Breakdown Voltage ABVpss ATj we Drain to Source on State Resistance |ID=9A 0.13 0.18 (VGS=10 V) ID=14A 0.14 0.21 Gate Threshold Voltage (VDS=VGS, ID=250yA) Vasith) 4 Forward Transconductance (VDS >ID(on) X RDS(on) Max, 4.6 7 S(u) IDS=9 A) Zero Gate Voltage Drain Current (VDS=80% rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 12 Gate to Source Charge 50% “erated YDS Qgs 1.5 Gate to Drain Charge fate Qgq 5 Turn on Delay Time VDDS0%8 ta(on) 35 Rise Time ID=14A tr 80 Turn Off Delay Time RG=7.50 ta(off) 60 Fall Time tt 45 Diode Forward Voltage 1.15 v (\\S=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time es tre 120 nsec Reverse Recovery Charge di/dt=100 A/asec Qrr 0.7 ue Input Capacitance VGS=0 Volts Ciss 650 Output Capacitance VDS=25 Volts Coss 250 Reverse Transfer Capacitance f= 1 MHz Crss 44 SAFE QPSUING MEA GO.) 2] ae pool eeerii a | 8 job NIT SSS SS See : —— 8 ooo oo See pS ox I TT TTT ot Rant TO SOURCE VOLTAGE vos) 0