F00019D_15 SSDI

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Technical content

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF130 __ __ Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level Package /5= TO-5 TO-5 SFF130/5

8 AMP / 100 Volts

0.18 Ω N-Channel Power MOSFET Features:

  • Rugged Construction with Poly Silicon Gate
  • Low RDS(ON) and High Transconductance
  • Excellent High Temperature Stability
  • Very Fast Switching Speed
  • Fast Recovery and Superior dV/dt Performance
  • Increased Reverse Energy Capability
  • Low Input and Transfer Capacitance for Easy Paralleling
  • Hermetically Sealed Package
  • Available in both hot case and isolated versions
  • Ideal for low power applications
  • TX, TXV, Space Level Screening Available 2/
  • Replacement for IRFF130 Types Maximum Ratings 3/ Symbol Value Units Drain – Source Voltage VDS 100 Volts Gate – Source Voltage VGS ±20 Volts Continuous Collector Current TC = 25ºC TC = 100ºC ID 8

5 Amps

Power Dissipation TC = 25ºC TA = 25ºC PD 25

19 Watts

Operating & Storage Temperature Top & Tstg -55 to +150 ºC Thermal Resistance Junction to Case RθJC 5 ºC/W Single Pulse Avalanche Energy EAS 75 mJ TO-5 Case Outline: NOTES: 1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ Unless Otherwise Specified, All Maximum Ratings and Electrical Characteristics @25ºC. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00019D DOC

Solid State Devices, Inc. Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF130/5 Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) BVDSS 100 –– –– Volts Temperature Coefficient of Breakdown Voltage ∆BVDSS Drain to Source On State Resistance (VGS=10 V ) ID=5A ID=8A RDS(on) –– 0.13 0.14 0.18 0.21 Ω Gate Threshold Voltage (VDS=VGS, ID=250 µA ) VGS(th) 2.0 2.8 4.0 V Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 9A) gfs 3 7 –– mho Zero Gate Voltage Drain Current (VDS=80% max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) IDSS 250 µA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 Volts 50% rated VDS Rated ID Qg Qgs Qgd 3.8 3.7 7.0 6.3 16.6 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS ID = 8A RG= 7.5Ω td(on) tr td(off) tf 9.5 nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– 1 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge TJ=25ºC IF=10A Di/dt=100A/µsec trr QRR 120 0.7 300 nsec nC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss 650 250 pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Number: SFF130/5 PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-5 Pin 3 Pin 1 Pin 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00019D DOC