F00015_15 SSDI
Document overview
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Technical content
SSD | PRELIMINARY a
14849 Firestone Boulevard La Mirada,CA 90638 7
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424
9 AMP
Designer’s Data Sheet 200 VOLTS 0.402 FEATURES: N-CHANNEL . Rugged anny with poly silicon gate POWER MOSFET + Low (on) and high transconductance " + Excellent high temperature stability 70-254 70-2542 + Very fast switching speed + Fast recovery and superior dv/dt performance : Increased reverse energy capability + Low input and transfer capacitance for easy paralleling <i - Hermetically sealed package Xv + Ceramic seals for improved hermeticity 6 ZEA LASS? - TX, TXV and Space Level screening available “6 + Replaces: IRFM230 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Continuous Drain Current ; >» {| 28 | Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 63 Total Device Dissipation @ TC=55°C 48 PACKAGE OUTLINE: TO-254 PACKAGE OUTLINE: TO 258z PIN 1: DRAIN PIN 1: DRAIN PIN 2: SOURCE PIN 2: SOURCE PIN 3: GATE PIN 3: GATE 260 545 260 73871 919 ie 050 810 [“ 504 ab .050 685 kad Je 270 in Tl | 335 270 CC 540 cs. —t . 3 x 088 dL] L150 Bsc (201) | L 150 BSC 3x 9.04044 | ax1508sc 4b ssoasc Available with Glass or Ceramic Seals. Contact Factory for details. SSDI prior to release.
PRELIMINARY ~ SSDI
14849 Firestone Boulevard- La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Tu=25°C (Unless Otherwise Specified) RATING symeoL| Min | tye | max | unr | Drain to Source Breakdown Voltage (VGS=0 V, ID=2501A) Vv Drain to Source on State Resistance (VGS=10 V, ID=5 A) 0.25 0.4 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=2501A) Vasith) Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS= 5 A) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 30 Gate to Source Charge 80% rated yos Qgs 10 Gate to Drain Charge = Qga 9 Turn on Delay Time VoD sre td(on) 30 Rise Time 50% rated ID tr 50 Turn Off Delay Time RG= 150 td(otf) 50 Fall Time tt 40 Diode Forward Voltage Vsp v (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time ees 450 nsec Reverse Recovery Charge di/dt=100 A/usec 3.0 pe Input Capacitance VGS=0 Volts Ciss 600 800 Output Capacitance VDS=25 Volts Coss 250 450 Reverse Transfer Capacitance f=1 MHz Crss 80 150 SAFE OPERATING AREA (8-0-4) Te= 28 ¢, Be comm Eee a Hae OO 0 A | A | . oer Ne eee g TN td LUT TPS TT FH a A 0 | Ea a al TI TTT TTT et LUI TMT TIMI CUT ot 1 to 100 1000 DRAIN TO SOURCE VOLTAGE (VOS)