F00013_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SSD D | PRELIMINARY
14849 Firestone Boulevard - La Mirada,CA 90638 a sy
Phone: (714) 670-SSDI (7734) Fax: (714) 522-7424 9 AMP Se Designer’s Data Sheet 200 VoLTS FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate - Low RDS(on) and high transconductance TO-257 - Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling + Hermetically sealed package - TX, TXV and Space Level screening available + Replaces: IRF230 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE Gate to Source Vottage Continuous Drain Current @ 25°C @ 100°C Operating and Storage Temperature Total Device Dissipation @ TC=25°C | op» | 8 | Total Device Dissipation @ TC=55°C Watts Single Pulse Avalanche Energy | es | | lm PACKAGE OUTLINE: TO-257 150 420 200 9 H49\\f 4107 Foo 7 wi.045 PIN OUT: 7 035 PIN 1: DRAIN T PIN 2: SOURCE 537 eee PIN 3: GATE 527 } 0 f i “4 750 1}{ I} 1/5 = 2 x100BSC 4 +.120BSC xo : i j i SSDI prior to release.
SFF230J SOLID STATE DEVICES, INC 14849 Firestone Boulevard. La Mirada,CA 90638 - Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25°C (Unless Otherwise Specified) RATING symeol| win | typ | max | unrr | Drain to Source Breakdown Voltage (VGS=0 V, ID=1mA) BVpss Drain to Source on State Resistance @6A 0.40 (VGS=10 V) @9A 0.49 Temperature Coefficient of Breakdown Voltage ABVD: oar \\ in wee Gate Threshold Voltage (VDS=VGS, ID=250HA) vem | 2 | - [| « |v | Forward Transconductance (VDS >ID(on) X RDS(on) Max, 3.0 S(5) IDS= 6 A) Zero Gate Voltage Drain Current (VDS=80% max rated voltage, VGS=0 V) HA (VDS=80% rated VDS, VGS=0 V, TA=125°C) Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 16 39 Gate to Source Charge 50% rated Vi DS Ges oat 5.7 Gate to Drain Charge = 9 8 25 . VDD=50% Turn on Delay Time rated VDS talon) 35 nsec Rise Time . ID=9A taott 80 Turn Off Delay Time RG= 7.52 tt Fall Time 40 Diode Forward Voltage Vso 1.4 (IS=rated ID, VGS=0 V, TJ=25°C) . TJ=25°C 450 nsec Diode Reverse Recovery Time = Reverse Recovery Charge dvensto0 Ayseo | de | = | 3.0 uc i Ciss 600 Input Capacitance VGS=0 Volts Output Capacitance VDS=25 Volts Gose 250 Reverse Transfer Capacitance f= 1 MHz rss 80 SAFE OPERATING AREA (S.0.A.) Te = 25 ¢, 0.¢. coon EEE a — Coo er oon g Te LOU NTT
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§ ek ee a a A oe -LUTIME UTM TUTTI TTT 1 1 10 100 1000 ORAN TO SOURCE VOLTAGE (VOS)