F00009_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424
9 AMP
Designer’s Data Sheet 200 VOLTS 0.402 FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance MILPACK + Excellent high temperature stability + Very fast switching speed - Fast recovery and superior dv/dt performance - Increased reverse energy capability - Low input and transfer capacitance for easy paralleling + Hermetically sealed surface mount package - TX, TXV and Space Level screening available + Replaces: IRF230 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Operating and Storage Temperature -55 to +150 Total Device Dissipation @ TC=25°C 63 Total Device Dissipation @ TC=55°C 48 PACKAGE OUTLINE: MILPACK 0.010 x 45 PIN OUT: 0.351.005" nad Wn Conde ceaet.o1s? PIN 1: DRAIN a rr O.050" Ref. i PIN 2: SOURCE T soot PIN 3: GATE in 0.050 ~ og" | LL Els | 0.130.005" ee —t 1 Oat ae en a 020" ooroeoor S SSDI prior to release.
14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ts=25°C (Unless Otherwise Specified) RATING sywpou| win | tye | max | unit | Drain to Source Breakdown Voltage (VGS=0 V, ID=250nA) BVpss 200 Vv Drain to Source on State Resistance (VGS=10 V, ID=5 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, DS250uAy Vas(th) 4 Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, S(0) IDS=5 A) Zero Gate Voltage Drain Current 'VDS=max rated voltage, VGS=0 V) 250 pA \\VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward| At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 30 39 Gate to Source Charge 80% rated VOS Qgs 10 7 Gate to Drain Charge = 12 Qgd 9 7 Turn on Delay Time VDD SO" ta(on) 30 Rise Time 50% rated ID tr 50 Turn Off Delay Time RG= 150 td(otf 50 Fall Time tt 40 Diode Forward Voltage Vsp (IS=rated ID, VGS=0 V, TJ=25°C) Diode Reverse Recovery Time ease nsec Reverse Recovery Charge di/dt=100 A/usec ne Input Capacitance VGS=0 Volts Ciss 600 800 Output Capacitance VDS=25 Volts Coss 250 450 Reverse Transfer Capacitance f= 1 MHz Crss 80 150 SAFE OPERATING AREA (S.0.A.) SS a ee a 00 | — CoN s HC NUTT ET 8 SS os Fa RT ee LUTE TINT TIN TTT 0.1 1 10 100 1000 DRAIN TO SOURCE VOLTAGE (VOS)