F00007 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ,
9 AMP
Designer’s Data Sheet 200 VOLTS 0.402 FEATURES: N-CHANNEL So POWER MOSFET - Rugged construction with poly silicon gate + Low RDS(on) and high transconductance CERPACK + Excellent high temperature stability - Very fast switching speed - Fast recovery and superior dv/dt performance + Increased reverse energy capability FS - Low input and transfer capacitance for easy paralleling eS CA + Hermetically sealed surface mount package FEL + Low inductance package o + TX, TXV and Space Level screening available - Replaces: IRF230 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Votage | vos [200 |v [coniuewonincwes YT Operating and Storage Temperature Top & Tstg -55 to +150 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55°C PACKAGE OUTLINE: CERPACK PIN OUT: ‘ PIN 1: SOURCE PIN 2: GATE CASE: DRAIN --— 0.370" ——+ 010" : 0.307" 0.320" 0.015" REF. NOTE: All ificati b hi i SSDI prior to release.
14849 Firestone Boulevard. La Mirada,CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25'C (Unless Otherwise Specified) Drain to Source Breakdown Voltage (VGS=0 V, ID=250,,A) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID= 5 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250A) Vas(th) Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS= 5 A) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 HA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward} Atrated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 30 39 Gate to Source Charge 80% rated VDS Qgs 10 _ Gate to Drain Charge ID=12A Qgd 9 _ Turn on Delay Time vos oe ta(on) 30 Rise Time 50% rated ID tr 3° Turn Off Delay Time RG= 150 td(off) 50 Fall Time tt 40 Diode Forward Voltage Vsp Vv (IS=rated ID, VGS=0 V, TJ=25"C) Diode Reverse Recovery Time eats9C ter nsec Reverse Recovery Charge di/dt=100 A/usec QrR ue Input Capacitance VGS=0 Volts Ciss 600 800 Output Capacitance VDS=25 Volts Coss 250 450 Reverse Transfer Capacitance f=1 MHz Crss 80 150 SAFE OPERATING AREA, S.0.A.) 0 = esi eet aii iieeeeeiil aS 5 a, i — Se eo g PCO TC Nt BN oe
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§ COC Co TT TIN TTT ae -EUIIIE TE TT TTT 0.1 + 10 100 1000 DRAN TO SOURCE VOLTAGE (VDS)