F00005_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734) -_ Fax: (714) 522-7424 é
9 AMP
Designer’s Data Sheet 200 VOLTS 0.402 FEATURES: N-CHANNEL POWER MOSFET + Rugged construction with poly silicon gate - Low RDS(on) and high transconductance 28 PIN CLCC - Excellent high temperature stability ~ - Very fast switching speed of‘ - Fast recovery and superior dv/dt performance x SS - Increased reverse energy capability lis iH + Low input and transfer capacitance for easy paralleling ‘ip ip p - Hermetically sealed surface mount package His p - TX, TXV and Space Level screening available + Replaces: IRF230 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Continuous Drain Current @ TC=25°C Amps Continuous Drain Current @ TA=25°C Operating and Storage Temperature °c. Thermal Resistance, Junction to Case Rec 6 “CW Thermal Resistance, Junction to Ambient Reva 120 Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=55"C Total Device Dissipation @ TA=25°C PACKAGE OUTLINE: 28 PIN CLCC 0.030 TYP. PIN OUT: 040 x 45 CHAM 3 PLCS. 0.010 +/-,001 . SOURCE: 1, 15-28 + > be DRAIN: 5-11 GATE: 2, 3, 13, 14 as 0.030 All Drain/Source Pins must be connected on the PC Board in order to maximize current capability PIN 26 | 0.095 MAX. 0.035 and minimize RDS(on) PIN 1 . PIN 1 0.010 TYP. 020 x 45 CHAM. 1 PLC NOTE: All ificati bject to ch ith SSDI prior to release.
14849 Firestone Boulevard- La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ T,=25°C (Unless Otherwise Specified) RATING svupou | wn | Tye | max | unr Drain to Source Breakdown Voltage (VGS=0 V, ID=250A) Vv Drain to Source on State Resistance (VGS=10 V, ID= 5 A) On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250HA) Vasith) Vv Forward Transconductance (VDS >ID(on) X RDS(on) Max, IDS=5 A) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=125°C) 1000 Gate to Source Leakage Forward At rated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 39 Gate to Source Charge 80% rated yes Qgs 7 Gate to Drain Charge = 1 Qga 7 Turn on Delay Time vob sore ta(on) 30 Rise Time 50% rated ID te 50 Turn Off Delay Time RG= 150 td(otf) 50 Fall Time tt 40 Diode Forward Voltage Vsp Vv (IS=rated ID, VGS=0 V, TJ=25°C) TJ=150°C 450 Diode Reverse Recovery Time tre Reverse Recovery Charge eee. | om | = | | = | | Input Capacitance VGS=0 Volts Ciss 600 800 Output Capacitance VDS=25 Volts Coss 250 450 Reverse Transfer Capacitance f= 1 MHz Crss 80 150 For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: * Rating based on size of chip. Device rating may vary depending on mounting and heatsink conditions. Consult SSDI Marketing department for thermal derating details. ** — Due to package resistance; all Source/Drain pins must be connected on the PC Board in order to obtain the lowest RDS(on) possible.