F00003_15 SSDI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
14849 Firestone Boulevard. La Mirada,CA 90638 = = Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ‘* 28*AMP Designer’s Data Sheet 100 VOLT 0.095 Q FEATURES: N-CHANNEL POWER MOSFET - Rugged construction with poly silicon gate - Low RDS(on) and high transconductance 28 PIN CLCC - Excellent high temperature stability - Very fast switching speed . Fast recovery and superior dv/dt performance . Increased reverse energy capability - Low input and transfer capacitance for easy paralleling - Hermetically sealed surface mount package + TX, TXV and Space Level screening available - Replaces: IRF140 Types MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE | UNIT | Drain Source Votage | vos | to | ots Continuous Drain Current ; > [| | Amps Operating and Storage Temperature c Total Device Dissipation @ TC=25°C Total Device Dissipation @ TC=80°C PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: . 0.030 TYP. DRAIN: 5-11 GATE: 2, 3, 13, 14 _f 0030 NOTE: 0.450 +7-.008 SQ. 0,300 an 0.300 All Drain/Source Pins must be connected on the PC Board in order to maximize current capabili L and minimize Boston) PIN 26 . | 0.095 MAX. 1 0095 PIN 1. NI 0.010 TYP. 020 x 45 CHAM. 1 PLC * Rating based on size of chip. Device rating may vary depending on mounting and heatsink conditions. Consult SSDI Marketing department for thermal derating details. NOTE: All ificati bject to ch ith SSDI prior to release.
SOLID STATE DEVICES, INC
14849 Firestone Boulevard - La Mirada,CA 90638
Phone: (714) 670-SSDI (7734). Fax: (714) 522-7424 ELECTRICAL CHARACTERISTICS @ Ty=25’C (Unless Otherwise Specified) [RATING | spon] on |v | max | unr Drain to Source Breakdown Voltage (VGS=0 V, ID=250,1A) BVpss Vv Drain to Source on State Resistance (VGS=10 V, ID=60% Rated ID 0.075 On State Drain Current (VDS >ID(on) X RDS(on) Max, VGS=10 V Gate Threshold Voltage (VDS=VGS, ID=250uA) 40 v Forward Transconductance (VDS >ID(on) X RDS(on) Max, 87 IDS=60% rated ID) Zero Gate Voltage Drain Current (VDS=max rated voltage, VGS=0 V) 250 pA (VDS=80% rated VDS, VGS=0 V, TA=150°C) 1000 Gate to Source Leakage Forward} Atrated VGS 100 Gate to Source Leakage Reverse -100 Total Gate Charge VGS=10 Volts Qg 40 Gate to Source Sharge 50% rated DS Qgs 8 Gate to Drain Charge ater Qa 20 =507 Turn on Delay Time vo0= Soe ta(on) 15 23 Rise Time rated ID tr 72 110 Turn Off Delay Time RG= 9.19 ta(otf) 40 60 Fall Time tt 50 75 Diode Forward Voltage v (IS=rated ID, VGS=0 V, Tu=25°C) Diode Reverse Recovery Time Twas C 70 150 nsec Reverse Recovery Charge di/dt=100 A/usec 0.44 0.91 pe Input Capacitance VGS-0 Volts Ciss 1500 Output Capacitance VDS=25 Volts Coss 500 Reverse Transfer Capacitance f= 1 MHz Crss 90 SAFE OPERATING AREA. (S.0.A.) NOTES:
100 SS aS
ee * Rating based on size of chip. Device rating eS may vary depending on mounting and 2 gp LUMI Co heatsink conditions. Consult SSDI a 22 eee EE Marketing department for thermal derating bs i ** Due to package resistance; all Source/Drain ————= 2. eee el order to obtain the lowest RDS(on) Pt possible. a Pog ae ot oral TO SOURCE youre (v05) a