F00002_15 SSDI
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SOLID STATE DEVICES, INC. SFF70N04 SERIES DATA SHEET #: F00002B MAXIMUM RATINGS SYMBOL UNITS V ALUE IDM 140Pulsed Drain Current Drain-Source Voltage V DS 40 Amps Volts W oC/W
70 AMP / 40 VOLTS
0.010 ΩΩΩΩΩ N-CHANNEL POWER MOSFET Thermal Resistance, Junction to Case R θθθθθJC Total Device Dissipation @ T C = 25oC PD IAR 60Avalanche Current Amps DESIGNER'S DATA SHEET NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. SFF70N04 S.5 TX Part Number /Ordering Information 1/ Screening 2/: _ = Not Screened TX = TX Level TXV = TXV Level S = Space Level Package: 3/ S.5 = SMD.5 APPLICATION NOTES:
- Low RDS (on) and High Transconductance
- Excellent High Temperature Stability
- Fast Switching Speed
- Intrinsic Rectifier
- Hermetically Sealed Package
- TX, TXV , and Space Level Screening Available oCOperating and Storage Temperature T J, T STG -55 to +175 107 1.1 IC 56 5/ Continuous Collector Current @ T C = 25oC @ T C = 100oC Amps
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SMD.5 (S.5) Gate-Source Voltage V GS E20 Volts E AR 180Repetitive Avalanche Energy mJ
SOLID STATE DEVICES, INC. V40 -V (BR)DSS Drain - Source Breakdown Voltage (VGS = 0V , ID = 250µA) nA- E100Gate - Emitter Leakage Current (VDS = 0V, VGS = +20V) µµµµµA- 50IDSS Zero Gate Voltage Drain Current (VDS = 40V , VGS = 0V) 70 -ID(on) On-State Drain Current * (VDS = 5V, VGS = 10V) S20 -gfs MIN MAXELECTRICAL CHARACTERISTICS 4/ SYMBOL UNITS -p FOutput Capacitance - C oss V DD = 15V , ID = 70A, V GEN = 10V , R L = 0.2Ω , RG = 2.5Ω Turn-On Delay Time t d(on) 30 nsec IGSS NOTES: * Pulse Test: Pulse Width = 300us, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability, Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ All Electrical Characteristics @25oC, Unless Otherwise Specified. 5/ Current Limited by Package, Die Rated at 70A SFF70N04 SERIES Reverse Transfer Capacitance - C rss Turn-Off Delay Time Rise Time t r 30 nsec td(off) 100 nsec V13Gate Threshold Voltage (VDS = VGS , IDS = 250µA) V GS (th) Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Available Part Numbers: SFF70N04S.5 A Forward Transconductance * (VDS = 15V , ID = 30A) -p F Fall Time tf 60 nsec- TYP 600 160 TJ = 25oC TJ = 125oC Reverse Diode Forward Voltage Drop (IF = 70A, VGS = 0V) -V F 1.5 V1.0 Reverse Diode Reverse Recovery Time (IF = 70A, di/dt = 100A/µs) -tRR 100 nsec50 0.010 0.017 0.014 0.024 R DS(on) Drain-Source On-State Resistance * V GS = 10V , ID = 30A V GS = 4.5V , ID = 20A ΩΩΩΩΩ 0.008 0.014 0.011 0.019 TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC -p FInput Capacitance - C iss 2700V DS = 25V , V GS = 0V , f = 1MHz -n CGate - Source Charge - Q gs Gate - Drain Charge - Q gd -n C 100 nCTotal Gate Charge - Q g 50V DS = 15V , V GS = 10V , ID = 70A PIN ASSIGNMENT Source GateDrainPACKAGE Pin 3Pin 2Pin1SMD.5