D40D1 ETC1
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Technical content
NPN POWER TRANSISTORS pamemes) st 30 - 60 VOLTS » COMPLEMENTARY TO THE D41D SERIES 1 AMP, 6.25 WATTS The General Electric D40D is a power transistor designed for NPN various specific and general purpose applications, such as: \\ couscron output and driver stages of amplifiers operating at frequencies dD from DC to greater than 1.0 MHz; series, shunt and switching aX ast regulators; low and high frequency inverters/converters; and BA many others. Za earten
5 CASE STYLE TO-202
Features: DIMENSIONS ARE IN INCHES AND (MILLIMETERS) © High free-air power dissipation anes * NPN complement to D41D PNP ‘ir aneatse * Low collector saturation voltage (0.5V typ. @ 1.0A Ic) auso.osz0 Bares) © Excellent linearity aan! ¢ Fast Switchin 9 sszseaass_ | ‘ee saratr. cnaniren ‘Tozer 0785) 2 T2415 28677 0.010-0026 am Wasser ooso10s_| . Rie [wee [vert [rea 2 [res [tas] (Cro-zee [ewrrer [~ ease [ cnutecron | couuscron_| maximum ratings (Ta = 25°C) (unless otherwise specified) UNITS: Colector-Emitier Veltage [Voro [30 | 48 | 60 | Vorts | Collector-Emitter Voltage [ Vces [45 Teo Vos | Emitter Base Voltage a Collector Current — Continuous Ic 1 1 1 Peak(?) tom 15 1.5 15 Base Current — Continuous a Total Power Dissipation @ Ta = 25°C 1.67 1.67 1.67 Watts @Tc = 256 6.25 6.25 6.25 thermal characteristics Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case | Rac [20 2020 ecw | Maximum Lead Temperature for Soldering (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%,
electrical characteristics (To = 25°C) (unless otherwise specified) c CHARACTERISTIC SYMBOL [MIN | TYP | MAX |_UNIT off characteristics Collector-Emitter Sustaining Voltage F D D40D1,2 | VcEo(sus) 30 Volts Collector Cutoff Current (Vce = Rated Vceo) = To = 25°C _ 04 (Vce =:Rated Vces) To = 150°C 1.0 = HA (Vep=5V) ba second breakdown ‘Second Breakdown with Base Forward Biased FBSOA L.._SEEFIGURES on characteristics DC Current Gain D40D1, 4,7 150 (Ig = 100mA, Voe = 2V) 04002, 5, 8 360 D40D1, 4,7 . (Io = 1A, Voce = 2v) Pepe A ‘| Coliector-Emitter Saturation Voltage v (Ic = 500mA, Ip = SOMA) paop1, 2 4,5 | VoE(sat) + Volts Base-Emitter Saturation Voltage ‘dynamic characteristics Collector Capacitance Current-Gain — Bandwidth Product ft (Ig = 20mA, Vce = 10V) switching characteristics (Resse toad dS Delay Time + = =Ino= Voc = 30V, tp = 25 CR es (1) Pulse Test PW = 300ms Duty Cycle = 2%. tet CTT a ee 4 a TT Ett eel TUT PSNI | Se ase ee eee el EN y es i a aa OS ee SAN OO DN ET ERTN LT TN COCOONS) Ceo FIG.1 FIG.2 TYPICAL Hre VS Ic
vet || [en | ¢ o_O rn Lee At Bat ee PR TTT [few SeteeaiH | eertiNet = ol LT TT Ne 1 i \\ PSE Tee Try Soe 2 # ——-44-+ a 22” {TTT TA ——— LEE an TN FIG.3 TYPICAL SATURATION FIG. 4 SAFE REGION OF OPERATION VOLTAGE CHARACTERISTICS [SSeS bE | ———— ee ee a 2a | | y | tT ft tT yt Tf i ZT TTT TT a ee pe ee j es SS +++ +--+ #4 FIG.5 MAXIMUM TRANSIENT THERMAL IMPEDANCE,