CEM9925 CET
Document overview
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Technical content
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES | | © 20V , 5A, Roson=45mQ @Ves=4.5V. = _! Di Di D2 De Ros(ony=60MQ @Ves=2.5V. a ao Super high dense cell design for extremely low Rosion). High power and current handing capability. aN aN Surface Mount Package. ey ey . Wd i] s0-8 Si Gi Se Ge ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Drain Current-Continuous* @Ts=125°C | o | so | a | Drain-Source Diode Forward Current * Fiminnroetssa’ | |e | w_| Operating Junction and Storage Ty, Tstc 55 to 150 ae) Temperature Range , THERMAL CHARACTERISTICS 5-147
ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted) [Parameter ——_—_—[Symboi]_—Condtion [in [Typ Max [nit FE crecimncrensnes Dan sno Beacinn tage | ats | Ve-O00-80A [m[ |v Peo OcnCuret | ts | vsetouviscvy | | [4 [| a pono [ool ware ftste F sszani toa | | | [ma lonsaeoanoet bom | wseavvsew [ol | [a FovadTasorivie | | vs=rovb-aoa [7 [®| [8 | [rm [ao] Eaten fos] al” Tate maces ete eM OL Te [ope | no Pfaff fame | eT ff FalcaeGawe | a | r fe [af eaeoencrage | ow | Fe fe) 5-148
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve