CEM9955 CET
Document overview
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Technical content
Dual N-Channel Enhancement Mode Field Effect Transistor | | FEATURES © 50V , 3A, Rosionj=130MQ @Ves=10V. Rosionj=200mMQ @Ves=4.5V. Di Di De De Super high dense cell design for extremely low Rosion). [8] [6] High power and current handing capability. e Surface Mount Package. ee Lh ee Lh & i] S08 , S1 Gi Sz Ge ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) [renner | is [to Drain Current-Continuous* @Ty=125°C po» | s [a | Drain-Source Diode Forward Current * Maximum Power Dissipation for Dual Operation* | mo | 2 | w | Operating Junction and Storage Ty. Tste 55 to 150 °C Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient* 5-200
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) [Parameter |Symbot] Contin in | ya | nt [5 | DenSonebeseomviige [ovis | Vo=OioaoA [a] | |v [ero GateVotage Drain Curent [ss [| Vossaovvos-ov ||| 1 | oa | oaeduyee | os | Vosentionav || [il ot pceraainien |nee ea eat a | Vs=4si,b=15a | | 008 o20| a | forse Dincurent | toon | Vos=sov,vosev_ | io] | | a | FonardTransondudarce | oes | Voss tovm=a | [6 | | s | [| es | seo | | - Vos =25V, Ves = OV fates fee] a" Talat | fe] ole | Vo=25, | fz | [ os | a [efoto éaedenoae |e | eT pe 5-201
28 N 29 |
Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe