CEM8912 CET
Document overview
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Technical content
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES | | © 30V , 7A, Rosionj=28mQ @Ves=10V. Roson=45mQ @Ves=4.5V. Di De De Super high dense cell design for extremely low Ros(on). High power and current handing capability. = == e Surface Mount Package. Ke, ey 2 Ls $0-8 S1 Gi S2 Ge ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Drain Current-Continuous* @Ts=125°C } o | » | a | wm rowoseser | mf 2 | Operating Junction and Storage Ty, Tst¢ -55 to 150 6 Temperature Range , THERMAL CHARACTERISTICS 5-77
ELECTRICAL CHARACTERISTICS (TA-25°C unless otherwise noted) Symbol] Condon [in pa nt 5 | OFF CHARACTERISTICS Drain-Source Breakdown Voltage Ves=0V, ID=250uA lo] | fv] Zero Gate Voltage Drain Current Vos=30V, Ves=0V rf ft fe] Gate-Body Leakage Ves =+20V, Vos=0V | | [too] na | ON CHARACTERISTICS? Gate Threshold Voltage Vos=Ves, Ip = 250A [2 | 28 | ma | Drain-Source On-State Resistance Ros(on) Nes=10¥ ln=7.08 || 4 | 28 | m ves=45v,=354 | | 33 | 45 | ma On-State Drain Current Vos= 5V, Ves= 10V lo | | [al Forward Transconductance Vos = 15V, lo =7A ls fo] fs] DYNAMIC CHARACTERISTICS” Input Capacitance | | 708 | 900 | F | ; Vos =15V, Ves= 0V Output Capacitance f=1,0MHz | | 255 | 460 | oF | Reverse Transfer Capacitance | | a9 | 120 | oF | SWITCHING CHARACTERISTICS" Turn-On Delay Tine Vo=25V | [8 [15 | os | Rise Time | «| Ves = 10V, |_| 14 | 20 | ns Turn-Off Delay Time Roen= 62 | | 5 | 55 | 1s | Total Gate Charge | a | | [45 | m0 | nc | Gate-Source Charge Qus Ves =10V || 5 || nc Gate-Drain Charge | Ou _| | fa] [ac] 5-78
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation
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Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve