High efficiency fast recovery rectifier diode

Document overview

  • Manufacturer or author: STMicroelectronics
  • PDF pages: 5

Technical content

October 2001 - Ed: 4B HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE Low voltage drop and rectifier suited for switching mode base drive and transistor circuits.

DESCRIPTION

n Very low conduction losses n Negligible switching losses n Low forward and reverse recovery times n The specifications and curves enable the determination of trr and IRM at 100°C under users conditions. FEATURES AND BENEFITS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IFRM Repetitive peak forward current * tp = 5µs F = 1KHz 80 A IF(AV) Average forward current* Ta = 95°C δ = 0.5 1.5 A IFSM Surge non repetitive forward current tp=10 ms Sinusoidal 50 A Tstg Storage temperature range -65 +150 °C Tj Maximum operating junction temperature + 150 °C TL Maximum lead temperature for soldering during 10s at 4mm from case 230 °C * On infinitive heatsink with 10mm lead length ABSOLUTE RATINGS (limiting values) IF(AV) 1.5 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V MAIN PRODUCT CHARACTERISTICS DO-15 BYW100-200 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BYW100-200 Symbol Parameter Tests conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C V R =V RRM 10 µA Tj = 100°C 0.5 mA VF ** Forward voltage drop Tj = 25°CI F = 4.5A 1.2 V Tj = 100°C I F = 1.5A 0.78 0.85 Pulse test:*t p=5m s ,δ <2% ** tp = 380µs,δ <2% To evaluate the maximum conduction losses use the following equation : P=0 . 7 5xIF(AV) + 0.075 x IF2(RMS) STATIC ELECTRICAL CHARACTERISTICS Symbol Tests conditions Min. Typ. Max. Unit trr IF =1 A d IF/dt = - 50A/µs VR = 30V Tj = 25°C 35 ns tfr IF = 1.5A dIF/dt = - 50A/µs Measured at 1.1 x VFmax Tj = 25°C 30 ns VFP IF = 1.5A dIF/dt = - 50A/µs Tj = 25°C 5V Qrr IF = 1.5A dIF/dt = - 20A/µs VR ≤ 30V Tj = 25°C 10 nC RECOVERY CHARACTERISTICS Symbol Parameter Value Unit R th (j-a) Junction to ambient* 45 °C/W * On infinite heatsink with 10mm lead length. THERMAL RESISTANCES

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BYW100-200 5 1 01 52 02 50 100 110 Rth(°C/W) Rth(j-a) Rth(j-l) Lleads(mm) Fig. 3:Thermal resistance versus lead length. 1.00 10.00 50.00 IFM(A) Tj=25°C Tj=100°C Tj=100°C (Typical values) VFM(V) Fig. 5: Forward voltage drop versus forward current (maximum values). 1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01 0.10 1.00 Zth(j-a)/Rth(j-a) Single pulse δ = 0.1 δ = 0.2 δ = 0.5 tp(s) Fig. 4:Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu) = 35µm). 1 10 100 2001 VR(V) C(pF) F=1MHz Tj=25°C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 PF(av)(W) δ = 0.2 δ = 0.5 δ = 1δ = 0.05 δ = 0.1 T δ=tp/T tpIF(av) (A) Fig. 1:Average forward power dissipation versus average forward current. 0 25 50 75 100 125 1500.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IF(av)(A) Rth(j-a)=100°C/W Rth(j-a)=Rth(j-l) Tamb(°C) Fig. 2:Average forward current versus ambient temperature (δ=0.5).

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BYW100-200 25 50 75 100 125100 150 200 250 Tj(°C) IRM Qrr trr Fig. 9: Dynamic parameters versus junction temperature. 1 10 1000 100 150 trr(ns) IF=1.5A VR=30V 90% confidenceTj=100°C Tj=25°C dIF/dt(A/µs) Fig. 7:Reverse recovery time versus dIF/dt. 1 10 1000.0 0.5 1.0 1.5 2.0 2.5 IRM(A) IF=1.5A VR=30V 90% confidence Tj=100°C Tj=25°C dIF/dt(A/µs) Fig. 8:Peak reverse recovery current versus dIF/dt.

Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BYW100-200 Ordering code Marking Package Weight Base qty Delivery mode BYW100-200 BYW100-200 DO-15 0.4 g 1000 Ammopack BYW100-200RL BYW100-200 DO-15 0.4 g 6000 Tape and reel n White band indicates cathode n Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com PACKAGE MECHANICAL DATA DO-15 A CC D B REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 6.05 6.75 0.238 0.266 B 2.95 3.53 0.116 0.139 C 26 31 1.024 1.220 D 0.71 0.88 0.028 0.035