BFR520 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520
DESCRIPTION
- High Power Gain
- High Current Gain Bandwidth Product
- Low Noise Figure
APPLICATIONS
- Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 6V; IE= 0 0.05 μA hFE DC Current Gain IC= 20mA ; VCE= 6V 60 250 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1GHz 9 GHz COB Output Capacitance IE= 0 ; VCB= 6V; f= 1MHz 0.5 pF PG Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 15 dB PG Power Gain IC= 20mA ; VCE= 6V; f= 2GHz 9 dB ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 13 14 dB NF Noise Figure IC= 5mA ; VCE= 6V; f= 900MHz 1.1 1.6 dB NF Noise Figure IC= 20mA ; VCE= 6V; f= 900MHz 1.6 2.1 dB isc Website：www.iscsemi.cn 2
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn 4
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn 6
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFR520 isc Website：www.iscsemi.cn