BFG540 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNRFTransistor BFG540
DESCRIPTION
- LowNoiseFigure NF=1.3dBTYP.@VCE =8V,IC =10 mA,f=900MHz
- High Gain ︱S21︱2 =16dBTYP.@VCE=8 V,IC =40 mA,f=900 MHz
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforusein lownoise ,high-gainamplifiers and linearbroadbandamplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 20 V VCEO Collector-EmitterVoltage 12 V VEBO Emitter-BaseVoltage 2.5 V IC CollectorCurrent-Continuous 120 mA PC CollectorPowerDissipation @TC=25℃ 0.5 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -65~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNRFTransistor BFG540 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=1mA;IB=0 12 V ICBO CollectorCutoffCurrent VCB=8V;IE=0 0.05 μA hFE DCCurrentGain IC=40mA;VCE=8V 60 250 fT Current-Gain—BandwidthProduct IC=40mA;VCE=8V;f=1MHz 9 GHz Cre FeedbackCapacitance IE=0;VCB=8V;f=1MHz 0.5 pF Ce Emittercapacitance IC=iC=0,VEB=0.5V,f=1MHz 2.0 pF CC Collectorcapacitance IE=ie=0,VCB=8V,f=1MHz 0.9 pF ︱S21︱2 InsertionPower Gain IC=40mA;VCE=8V;f=900MHz 15 16 dB NF NoiseFigure IC=10mA;VCE=8V;f=900MHz 1.3 1.8 dBIC=40mA;VCE=8V;f=900MHz 1.9 2.4 IC=10mA;VCE=8V;f=2GHz 2.1
iscSiliconNPNRFTransistor BFG540 PACKAGESIZEDRAWING