BFQ591 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591
DESCRIPTION
- High Power Gain
- High Current Gain Bandwidth Product
- Low Noise Figure
APPLICATIONS
- Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 200 mA PC Collector Power Dissipation @TC=25℃ 2.25 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CES Collector-Emitter Breakdown Voltage IC= 0.1mA ; IB= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1m A ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1m A ; IC= 0 3 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μA hFE DC Current Gain IC= 70mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 70mA ; VCE= 12V; f= 1GHz 7 GHz PG Power Gain IC= 70mA;VCE= 12V; f= 900MHz 11 dB PG Power Gain IC= 70mA;VCE= 12V; f= 2GHz 5.5 dB Cre Feedback Capacitance IE= 0 ; VCB= 12V; f= 1MHz 0.8 pF ︱S21e︱2 Insertion Power Gain IC= 70mA ; VCE= 12V; f= 1GHz 10 dB VO Output Voltage note 700 mV Note: d im = 60 dB (DIN45004B); Vp = Vo; Vq = Vo −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured @ f(p+q+r) = 793.25 MHz. isc Website www.iscsemi.cn ： 2
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ591 isc Website：www.iscsemi.cn 4