BFQ540 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ540
DESCRIPTION
- High Gain
- High Output Voltage
- Low Noise
APPLICATIONS
- Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 120 mA PC Collector Power Dissipation @TC=25℃ 1.2 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ540
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CES Collector-Emitter Breakdown Voltage IC= 40μA ; RBE= 0 15 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100μA ; IC= 0 2 V ICBO Collector Cutoff Current VCB= 8V; IE= 0 0.05 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 0.2 μA hFE DC Current Gain IC= 40mA ; VCE= 8V 60 250 fT Current-Gain—Bandwidth Product IC= 40mA ; VCE= 8V; f= 1GHz 9 GHz Cre Feedback Capacitance IE= 0 ; VCB= 8V; f= 1MHz 0.9 pF ︱S21e︱2 Insertion Power Gain IC= 40mA ; VCE= 8V; f= 900MHz 12 13 dB NF Noise Figure IC= 40mA ; VCE= 8V; f= 900MHz 1.9 2.4 dB isc Website：www.iscsemi.cn 2
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFQ540 isc Website：www.iscsemi.cn