BF775 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN RF Transistor B F 7 7 5
DESCRIPTION
- Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz
- High Gain ︱S21e︱2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz
APPLICATIONS
- Designed for use in TV-sat and UHF tuners. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous 4 mA PC Collector Power Dissipation @TC=25℃ 0.28 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃
INCHANGE Semiconductor isc RF Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN RF Transistor B F 7 7 5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I C= 1mA ; IB= 0 15 V ICES Collector Cutoff Current V CE= 20V; VBE= 0 10 μA ICBO Collector Cutoff Current V CB= 10V; IE= 0 0.1 μA IEBO Emitter Cutoff Current V EB= 2.5V; IC= 0 0.1 μA hFE DC Current Gain I C= 15mA ; VCE= 8V 40 200 fT Current-Gain—Bandwidth Product I C= 15mA ; VCE= 8V; f= 500MHz 3.5 5 GHz COB Output Capacitance I E= 0 ; VCB= 10V; f= 1MHz 0.38 0.6 pF PG Power Gain I C= 15mA ; VCE= 8V; f= 900MHz 15 dB PG Power Gain I C= 15mA ; VCE= 8V; f= 1.8GHz 9.5 dB ︱S21e︱2 Insertion Power Gain I C= 15mA ; VCE= 8V; f= 900MHz 12.5 dB ︱S21e︱2 Insertion Power Gain I C= 15mA ; VCE= 8V; f= 1.8GHz 7 dB NF Noise Figure I C= 2mA ; VCE= 6V; f= 900MHz 1.8 dB NF Noise Figure I C= 2mA ; VCE= 6V; f= 1.8GHz 2.9 dB