BF410A PHILIPS

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Technical content

Product specification File under Discrete Semiconductors, SC07 December 1990 DISCRETE SEMICONDUCTORS BF410A to D N-channel silicon field-effect transistors

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D

DESCRIPTION

Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four I DSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D). PINNING - TO-92 VARIANT 1 = drain 2 = source 3 = gate Fig.1 Simplified outline and symbol handbook, halfpage MAM257 s d g QUICK REFERENCE DATA Drain-source voltage V DS max. 20 V Drain current (DC or average) I D max. 30 mA Total power dissipation up to Tamb =7 5°CP tot max. 300 mW BF410A B C D Drain current VDS = 10 V; VGS =0 IDSS min. 0.7 2.5 6 10 mA max. 3.0 7.0 12 18 mA Transfer admittance VDS = 10 V; VGS = 0; f = 1 kHz  yfs  min. 2.5 4 6 7 mS Feedback capacitance VDS = 10 V; VGS =0 C rs typ. 0.5 0.5 −− pF VDS = 10 V; ID = 5 mA C rs typ. −− 0.5 0.5 pF Noise figure at optimum source admittance G S = 1 mS;−BS = 3 mS; f = 100 MHz VDS = 10 V; VGS = 0 F typ. 1.5 1.5 −− dB VDS = 10 V; ID = 5 mA F typ. −− 1.5 1.5 dB

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE STATIC CHARACTERISTICS Tamb =2 5°C Drain-source voltage V DS max. 20 V Drain-gate voltage (open source) V DGO max. 20 V Drain current (DC or average) I D max. 30 mA Gate current ± IG max. 10 mA Total power dissipation up to Tamb =7 5°CP tot max. 300 mW Storage temperature range T stg −65 to+150 °C Junction temperature T j max. 150 °C From junction to ambient in free air R th j-a = 250 K/W Gate cut-off current BF410A B C D −VGS = 0.2 V; VDS =0 −IGSS max. 10 10 10 10 nA Gate-drain breakdown voltage IS =0 ;−ID =1 0µA −V(BR)GDO min. 20 20 20 20 V Drain current VDS = 10 V; VGS =0 IDSS min. 0.7 2.5 6 10 mA max. 3.0 7.0 12 18 mA Gate-source cut-off voltage ID =1 0µA; VDS = 10 V −V(P)GS typ. 0.8 1.5 2.2 3 V

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DYNAMIC CHARACTERISTICS Measuring conditions (common source):VDS =1 0V ; VGS = 0; Tamb =2 5°C for BF410A and B VDS =1 0V ; ID = 5 mA; Tamb =2 5°C for BF410C and D y-parameters (common source) BF410A B C D Input capacitance at f = 1 MHz C is max. 5 5 5 5 pF Input conductance at f = 100 MHz g is typ. 100 90 60 50 µS Feedback capacitance at f = 1 MHz C rs VGS = 0 instead of ID =5m A  yfs  min. −− 6.0 7.0 mS Output capacitance at f = 1 MHz C os max. 3 3 3 3 pF Output conductance at f = 1 MHz g os max. 60 80 100 120 µS Output conductance at f = 100 MHz g os typ. 35 55 70 90 µS Noise figure at optimum source admittance Fig.2 VGS = 0 for BF410A and BF410B; ID = 5 mA for BF410C and BF410D; f = 1 MHz; Tamb =2 5°C. handbook, halfpage typ 1.5 0.5 C rs (pF) VDS (V) 4 8 12 16 MDA277 Fig.3 VDS 10 V; f = 1 kHz; Tamb =2 5°C; typical values. handbook, halfpage |yfs| (mA/V) ID (mA) 10 15 MDA278 BF410B BF410A BF410C BF410D

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D PACKAGE OUTLINE UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 L 14.5 12.7 e 2.54 1.27 (1) max max 2.5 2.5 0.66 0.56 DIMENSIONS (mm are the original dimensions) Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. SOT54 variant TO-92 SC-43 A L 0 2.5 5 mm scale b c D b1 L1 d E Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant e 97-04-14

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF410A to D DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.