8N80

8N80 NELLSEMI

Document overview

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Technical content

(8A, 800Volts) They are designed for use in applications. such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, and general purpose switching applications . The Nell 8N80 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts.

DESCRIPTION

Low reverse transfer capacitance (C = 13pF typical)RSS R = 1.55Ω @ V = 10V DS(ON) GS Ultra low gate charge(35nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature

FEATURES

I (A)D 8 V (V)DSS 800 1.55 @ V = 10VGS R (Ω)DS(ON) Q (nC) max.G D (Drain) G (Gate) S (Source) UNIT V /ns V W(W/°C) A mJ ºC -55 to 150 VALUE 5.1 800 ±30 800 178 (1.43) 4.5 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Storage temperature Single pulse avalanche energy(Note 2) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Peak diode recovery dv/dt(Note 3) Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1. . Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 17.8 T =25°C C 2.I = 8A, V = 50V, L = 25mH, R = 25Ω, starting T =25°C.AS DD GS J 850 Repetitive avalanche energy(Note 1)EAR 3.I ≤ 8A, di/dt ≤ 200A/µs, V ≤ V , starting T =25°C.SD DD (BR)DSS J Total power dissipation (Derate above 25°C) I =8A, R =50Ω, V =10V AR GS GS EAS I =8A, L=25mHAS www.nellsemi.com Page 1 of 8 TO-220AB (8 )N80A TO-220F (8 )N80AF D GDS G SD TO-220AB TO-220F TO-3PB (8N80B) G D S D TO-3PB 220 (1.75) 59 (0.48)

UNITMin. 0.70 2.10 THERMAL RESISTANCE PARAMETER Thermal resistance, junction to case SYMBOL Rth(j-c) Typ. Max. ºC/W Thermal resistance, junction to ambientRth(j-a) UNIT V ns μA pF nC 150 Max. 100 800 1.29 -100 100 0.5 2050 250 140 175 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 250µA ,D V = 0VGS TEST CONDITIONS I = 250µA, D V =VDS GS V =800V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS Gate to source charge V = 640V, V = 10V, I = 8ADD GS D (Note 1, 2) Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) V/ºC Ω nA T =125°C C Typ.Min. 1.55 V = 400V, VDD (Note 1 ) = 10V, l = 8A,GS D R = GS 25Ω , 2 V = 25V, V = 0V, f =1MHzDS GS V = -30V, V = 0VGS DS V = 30V, V = 0VGS DS Static drain to source on-state resistanceRDS(ON) I =4A, V = 10VD GS Gate to drain charge (Miller charge)QGD V =640V, V =0V DS GS

3 V5V =V , I =250μA GS DS DGate threshold voltageVGS(TH)

www.nellsemi.com Page 2 of 8 8N80 Series TO-220AB TO-220F 62.5 110 135 1580 TO-3PB TO-3PB 0.57 OFF CHARACTERISTICS ON CHARACTERISTICS gfs Forward transconductance (Note 1) V =50V, I =4A DS D DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS 5.6 S SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C UNITMax.TEST CONDITIONSPARAMETERSYMBOL Typ.Min. VI = 8A, V = 0VSD GS Diode forward voltageVSD 1.4 Continuous source to drain currentIs (IsD) Integral reverse P-N junction diode in the MOSFET D (Drain) G (Gate) S (Source) APulsed source currentISM 32 I = 8A, V = 0V, SD GS dI /dt = 100A/µs F Reverse recovery timetrr ns690 µCReverse recovery chargeQrr 8.2 Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature.

Fig.2 Transfer characteristics Drain current, l (A)D Gate-Source voltage, (V)VGS Drain-Source on-resistance, R (Ω)DS(ON) Drain current, I (A)D Fig.1 On-State characteristics Drain current, (A)l D Drain-to-Source voltage, (V)VDS Fig.3 On-resistance variation vs. drain current and gate voltage Fig.4 Body diode forward voltage vs. source current Reverse , l (A) DR Drain current Source-drain voltage, V (V)SD 4 62 10 www.nellsemi.com Page 3 of 8 8N80 Series ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 8 = 8A 80 = 800V

8 N 80 A

A = TO-220AB AF = TO-220F N = N-Channel B = TO-3PB *Notes: 1.V =50VDS 2.250µs Pulse test 150°C 25°C -55°C 10-1 10 1 100 *Notes: 1.250µs Pulse test 2.T =25°Cc VGS Top: 150 V 100 V 80 V 70 V 60 V Bottorm: 5.5 V *Note:T =25°CJ V =10VGS V =20VGS *Notes: 1.V =0VGS 2.250μs Pulse test 25°C 150°C

Fig.5 Capacitance characteristics Fig.8 On-resistance variation vs. Junction temperature Drain-Source on-resistance, RDS(ON) Junction temperature, T (°C)J Drain Current, l (A)D Fig.7 Breakdown voltage variation vs. temperature Drain-source breakdown voltage, BV DSS Junction temperature, T (°C)J Fig.6 Gate charge characteristics Fig.9-2 Maximum safe operating area for 8N80A Capacitance (pF) Drain-Source voltage, V (V)DS 500 2500 12 0 10 20 30 40 Gate-Source voltage,V (V)GS Total gate charge, Q (nC)G 1.2 1.1 0.9 0.8 -100 -50 0 50 100 150 0.0 1.5 0.5 -100 -50 0 www.nellsemi.com Page 4 of 8 8N80 Series 100 150 20050 2.5 200 Drain-source voltage, V (V)DS 2000 1500 1000 C =C +C (C =shorted)ISS GS GD DS C =C +C C =COSS DS GD RSS GD Notes: 1.V =0VGS 2.f=1MHz CRSS COSS CISS 10 0 10 1 *Note:I =8AD V = 640VDS V = 160VDS V = 400VDS *Notes: 1.V =10V GS 2.I =4AD *Notes: 1.V =0V GS 2.I =250µAD Operation in This Area is Limited by RDS(on) 10ms 100µs 1ms DC 10µs *Notes: 1.T =25°C J 2.T=150°C Single pulse 100 10 3 101 Drain Current, l (A)D Fig.9-1 Maximum safe operating area for 8N80B Drain-source voltage, V (V)DS Operation in This Area is Limited by RDS(on) DC 10ms 100µs 1ms 10µs *Notes: 1.T =25°C J 2.T=150°C Single pulse 100 10 3 101

www.nellsemi.com Page 5 of 8 8N80 Series Fig.11-1 for 8N80ATransient Thermal Response Curve Square wave pulse duration , t (sec.)1 -510 110010-110-210-410 -310 -110 -210 Fig.11-2 for 8N80AFTransient Thermal Response Curve Square wave pulse duration , t (sec.)1 -510 110010-110-210-410 -310 -110 -210 010 Notes: 1.R (t)=0.7°C/W Max.th(j-c) 2.Duty factor, D=t1/t2 3.T -Tc=P ×R (t)JM DM th(j-c) D = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse Thermal response, R (t)th(j-c) 010 Single pulse Notes: 1.R (t)=2.1°C/W Max.th(j-c) 2.Duty factor, D=t1/t2 3.T -Tc=P ×R (t)JM DM th(j-c) D = 0.5 0.2 0.1 0.05 0.02 0.01 Thermal response, R (t)th(j-c) Fig.9-3 Maximum safe operating area for 8N80AF Drain current, I (A) D Case temperature, T (°C)C 10ms DC 100µs 1ms 10µs *Notes: 1.T =25°C C 2.T =150°CJ Single pulse Operation in This Area is Limited by RDS(ON) 10 1 10 2 10 3 Fig.10 Maximum drain current vs. case temperature 25 50 75 100 150125 Drain current, I (A) D Case temperature, T (°C)C PDMPDM PDMPDM

www.nellsemi.com Page 6 of 8 8N80 Series ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + VDS RG VGS VDD Same Type as D.U.T. Driver dv/dt controlled by R* G l controlled by pulse period* SD D.U.T.-Device under test* L Period P.W. VGS (Driver) P.W. Period VDD lSD (D.U.T.) (D.U.T.) VDS Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Body Diode Reverse Current lRM di/dt l , Body Diode forward currentFM V =10VGS (D.U.T Fig.2A Switching test circuit 10V D.U.T. RL VDS VGS RG VDD Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.2B Switching Waveforms VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.11-3 Transient Thermal Response Curve for 8N80B Square wave pulse duration (sec.), t1 -510 110010-110-210-410 -310 -110 -210 010 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse Notes: 1.R (t)=0.57°C/W Max.th(j-c) 2.Duty factor, D=t1/t2 3.T -Tc=P ×R (t)JM DM th(j-c) PDMPDM Thermal response, R (t)th(j-c)

www.nellsemi.com Page 7 of 8 8N80 Series Fig.3A Gate charge test circuit Fig.3B Gate charge waveform Same Type as D.U.T. VDS D.U.T. 3mA VGS 0.3µF 50kΩ 0.2µF 12V QG QGS QGD 10V VGS Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L VDS RG 10V tp VDD D.U.T. VDD tp Time lAS BVDSS lD(t) VDS(t) Case Style 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB

www.nellsemi.com Page 8 of 8 8N80 Series Case Style TO-220F 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1 D (Drain) G (Gate) S (Source) TO-3PB 15.6±0.4 9.6 2.04.0 19.9±0.320.0 min 4.0 max 2 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 Φ3.2 0,1± 1.8 5.0 .±0 2 4.8±0.2 2.0±0.1 0.65 +0.2 -0.1 1.4 G D S 1 2 3 All dimensions in millimeters(inches) D (Drain) G (Gate) S (Source)