70PT

70PT NELLSEMI

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Technical content

SEMICONDUCTOR 70PT Series RoHS RoHS Stansard SCRs, 70A Main Features Symbol Value Unit IT(RMS) V /VDRM RRM IGT 70 A V mA40 / 80 1000 to 1600

DESCRIPTION

www.nellsemi.com The 70PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications, where power handling and power dissipation are critical, such as solid state relay, welding equipment SYMBOL IT(RMS) RMS on-state current full sine wave ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 1513 2A s dI/dt Critical rate of rise of on-state current 150 IGMPeak gate current PG(AV)Average gate power dissipation TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNITVALUE 550F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F = 60 Hz T =125ºCj T = 125ºCj T = 125ºCj T = 20 µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS V1000 to 1600 T =125ºCj VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage (180° conduction angle ) Average on-state current (180° conduction angle) IT(AV) 44 A TO-247AB TO-3P T =80°Cc T =75°Cc Maximum gate power PGM W10T =20µsp T = 125ºCj TO-3P insulated T =80°Cc T =75°Cc 575 Base on a clip assembly technology, they offer a superior performance in surge current capabilities. TO-247AB TO-3P TO-3P insulated Maximum peak reverse gate voltage VRGM 5 V T =65°Cc T =65°Cc TO-3P (non-Insulated) K A G A (70PTxxB) TO-3P (Insulated) K A G (70PTxxBI) TO-247AB (non-Insulated) (70PTxxC) and high power motor control. K A G Thanks to their internal ceramic pad, they provide high voltage insulation(2500V ).RMS V = 67% V , t = 200μs, I = 0.3AD DRM p G d /dt = 0.3A/μsIG 3(G) 1(K) 2(A)

V = 12V, R = 33ΩD L V = V , R = 3.3KD DRM L Ω, R = 220ΩGK I = 500mA, Gate openT I = 1.2×IG GT V = 67% V Gate openD DRM, 0.2 1000 mA V V mA V/µs I = 90A, T t = 380µsP T = 125°Cj T = 25°Cj T = 25°Cj V µA ELECTRICAL SPECIFICATIONS (T = 25 ºC unless otherwise specified)J TEST CONDITIONS SYMBOL V =V , V =VD DRM R RRM 1.6 6R = 220ΩGK Max. Max. Min. Max. Max. Min. Max. Max. Max. THERMAL RESISTANCE UNITVALUESYMBOL Parameter VGT V1.02Vto T = 125°Cj PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY 1000 V V PACKAGE Rd mΩT = 125°Cj T = 125°Cj T = 125°Cj Max. Max. 85 Threshold Voltage Dynamic Resistance 1.5 100 130 V 1200 V V V 70PTxxB/70PTxxBI 70PTxxC TO-3P TO-247AB 1600 V V V Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient 0.68 0.80 TO-3P/TO-247AB TO-3P insulated TO-3P/TO-247AB/TO-3P insulated °C/W °C/W S=Copper surface under tab Page 2 of 4www.nellsemi.com DELIVERY MODE Tube Tube Tube ,BASE Q TYWEIGHTPACKAGE 70PTxxB 70PTxxBI 70PTxxC MARKING

ORDERING INFORMATION

Note: xx = voltage ORDERING TYPE 70PTxxB 70PTxxBI 70PTxxC TO-3P insulated TO-3P TO-247AB 4.3g 4.8g 70PT10xx 70PT12xx 70PT16xx 8040 1000 120 150 70PT Series 40mA / 80mA 40mA / 80mA

ORDERING INFORMATION SCHEME SCR series Package type Current Voltage Code 70 = 70A, IT(RMS)

70 PT 16

B = TO-3P (non-insulated) 10 = 1000V 12 = 1200V 16 = 1600V BI = TO-3P ( insulated) C = TO-247AB Fig.1 Maximum power dissipation versus average on-state current (half cycle) P(W) Page 3 of 4www.nellsemi.com 100 120 0 15 Fig.2 RMS on-state current versus case temperature (full cycle) 0 25 50 75 100 125 IT(RMS) Fig.3 On-state characteristics (maximum values). Fig.4 Surge peak on-state current versus number of cycles. l (A)T(AV) 30 45 60 75 TO-3P insulated TO-3P TO-247AB 100 Vo = 1.02 V T max.j Rd = 85 mΩ T =T maxj j T =25°CJ V (V)TM ITM (A) 500 400 300 200 100 1 10 100 1000 I (A)TSM 150 250 350 450 Number of cycles 550 Non repetitive T initial=25°Cj Half cycle t=10ms 70PT Series BI

Fig.5 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding2 value of l t . Fig.6 Relative variations of gate trigger current, holding current and latching current versus junction temperature (typical values) 2 2I (A), l t (A s)TSM Page 4 of 4www.nellsemi.com dI/dt ≤ 150A/µs tp (ms) T initial=25°Cj 2I t ITSM Half cycle t=10ms 10000 1000 100 0.01 0.1 1.0 10.0 -40 0 20-20 0.0 0.5 1.0 1.5 2.0 2.5 lGT l &lH L l ,l ,l [T ] / l ,l ,l [T =25°C]GT H L j GT H L j T (°C)j 3.0 120 14010040 60 80 70PT Series Anode TO-247AB 5.38 (0.212) 6.20 (0.244) 15.49 (0.610) 16.26 (0.640) 16.15 (0.242) 20.80 (0.819) 21. (0.845)46 15.40 (0.606) 14.30 (0.560) 4.50 (0.177)Max 1.01 (0.040) 1.40 (0.055) 5.45 (0.215) 5.45 (0.215) 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 3.55 (0.138) 3.81 (0.150) 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.49 (0.059) 2.49 (0.098) 4.69 (0.185) 5.31 (0.209) (TYP.) (TYP.) Case Style K G A TO-3P 2.90 (0.114) 2.70 (0.106) 0.70 (0.028) 0.50 (0.020) 1.55 (0.061) 1.45 (0.057) 4.60 (0.181) 4.40 (0.173) 5.65 (0.222) 5.40 (0.213) 5.65 (0.222) 5.40 (0.213) 15.60 (0.614) 14.35 (0.565) 16.50 (0.650) 15.80 (0.622) 21.10 (0.831) 20.40 (0.803) Φ4.17 (0.164) 4.08 (0.160) 15.50 (0.610) 15.10 (0.594) R 4.60 (0.181) 3.65 (0.144) 3.40 (0.134) 1.40 (0.055) 1.20 (0.047) K A G 3(G) 1(K) 2(A)